MTD6N12T4, MTD-6N15, MTD6N15-1 Selling Leads, Datasheet
MFG:ON Package Cooled:www.dayue-hk.com D/C:09+ ROHS
MTD6N12T4, MTD-6N15, MTD6N15-1 Datasheet download
Part Number: MTD6N12T4
MFG: ON
Package Cooled: www.dayue-hk.com
D/C: 09+ ROHS
MTD6N12T4, MTD-6N15, MTD6N15-1
- Table of contents:
Info of MTD6N12T4
Info of MTD-6N15
Info of MTD6N15-1
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About MTD10N05E
PDF/DataSheet Download
Datasheet: MTD10N05E
File Size: 214905 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTD10N05E
PDF/DataSheet Download
Datasheet: MTD10N05E
File Size: 214905 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTD6N15-1
PDF/DataSheet Download
Datasheet: MTD6N15-1
File Size: 90786 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
MTD6N15-1 General Description
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
MTD6N15-1 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
150 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
150 |
Vdc |
| GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 50 s) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Pulsed |
ID IDM |
6.0 20 |
Adc |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
20 0.16 |
Watts W/°C |
| Total Power Dissipation @ TA = 25°C Derate above 25°C(Note 1) |
PD |
1.25 0.01 |
Watts W/°C |
| Total Power Dissipation @ TA = 25°C (1) Derate above 25°C(Note 2) |
PD |
1.75 0.014 |
Watts W/°C |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +150 |
°C |
MTD6N15-1 Features
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) - 0.3 Max
• Rugged - SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement - VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape
• Low RDS(on) - 0.3 Max
• Rugged - SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement - VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape
MTD6N15-1 Connection Diagram
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