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MTD6N15T4G, MTD6N20E, MTD6N20E1

MTD6N15T4G, MTD6N20E, MTD6N20E1 Selling Leads, Datasheet

MFG:ON Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:.  D/C:06+

MTD6N15T4G Picture

MTD6N15T4G, MTD6N20E, MTD6N20E1 Datasheet download

Five Points

Part Number: MTD6N15T4G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 150V 6A DPAK

 

 
 
 
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  • MTD6N15T4G

  • Vendor: ON D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-05-03
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)
  • MTD10N10EL

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  • z one electrn co.   China
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About MTD10N05E

PDF/DataSheet Download

Datasheet: MTD10N05E

File Size: 214905 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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  • MTD6N20E

  • Vendor: ON Pack: TO Qty: 95  Adddate: 2024-05-03
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  • MTD6N20ET4

  • Vendor: ON D/C: 08+& Qty: 30000 Note: N Channel  Adddate: 2024-05-03
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
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    Fax: 0086-755-61174144
    (11)

About MTD6N20E

PDF/DataSheet Download

Datasheet: MTD6N20E

File Size: 276135 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTD6N20E1 Suppliers

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  • MTD10N10EL

  • Vendor: ON Pack: TO Qty: 49  Adddate: 2024-05-03
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  • z one electrn co.   China
    Contact: Ms.CindyXiao   MSN:zone888@hotmail.com
    Tel: 86-755-83041906
    Fax: 86-755-83987397
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  • MTD12N06EZL

  • Vendor: ON Pack: TO Qty: 30  Adddate: 2024-05-03
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    Contact: Ms.CindyXiao   MSN:zone888@hotmail.com
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    Fax: 86-755-83987397
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About MTD10N05E

PDF/DataSheet Download

Datasheet: MTD10N05E

File Size: 214905 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MTD6N15T4G Parameters

Technical/Catalog InformationMTD6N15T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs300 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max1.25W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTD6N15T4G
MTD6N15T4G
MTD6N15T4GOSDKR ND
MTD6N15T4GOSDKRND
MTD6N15T4GOSDKR

MTD6N20E General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTD6N20E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
200
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
200
Vdc
GatetoSource Voltage - Continuous
GatetoSource Voltage - Nonrepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
6.0
3.8
18
Adc

Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
PD


50
0.4
1.75
Watts
W/°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 5 Apk, L = 10 mH, RG = 25)
EAS
180
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient when mounted to minimum recommended pad size
RJC
RJA
RJA
2.50
100
71.4
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.

MTD6N20E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on)Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

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