MX0912B251Y, MX0912B350Y, MX0912B351Y Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:N/A D/C:N/A
MX0912B251Y, MX0912B350Y, MX0912B351Y Datasheet download
Part Number: MX0912B251Y
MFG: PHILIPS
Package Cooled: N/A
D/C: N/A
MX0912B251Y, MX0912B350Y, MX0912B351Y
- Table of contents:
Info of MX0912B251Y
Info of MX0912B350Y
Info of MX0912B351Y
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About MX0912B251Y
PDF/DataSheet Download
Datasheet: MX0912B251Y
File Size: 94553 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About MX014
PDF/DataSheet Download
Datasheet: MX014
File Size: 199615 KB
Manufacturer: CMLMICRO [CML Microcircuits]
Download : Click here to Download
About MX0912B351Y
PDF/DataSheet Download
Datasheet: MX0912B351Y
File Size: 94987 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
MX0912B251Y General Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration, and specified in class C.
MX0912B251Y Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 65 | V |
| VCES | collector-emitter voltage | RBE = 0 | - | 60 | V |
| VCEO | collector-emitter voltage | open base | - | 20 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | collector current | tp 10 ms; d 10% | - | 15 | A |
| Ptot | total power dissipation (peak power) |
Tmb = 75 ; tp 10 ms; 10% | - | 690 | W |
| Tstg | storage temperature | -65 | +200 | ||
| Tj | operating junction temperature | - | 200 | ||
| Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
MX0912B251Y Features
· Interdigitated structure; high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
MX0912B251Y Typical Application
Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.
MX0912B351Y General Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C.
MX0912B351Y Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 65 | V |
| VCES | collector-emitter voltage | RBE = 0 | - | 60 | V |
| VCEO | collector-emitter voltage | open base | - | 20 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | collector current | tp 10 ms; d 10% | - | 21 | A |
| Ptot | total power dissipation (peak power) |
Tmb = 75 ; tp 10 ms; 10% | - | 960 | W |
| Tstg | storage temperature | -65 | +200 | ||
| Tj | operating junction temperature | - | 200 | ||
| Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
MX0912B351Y Features
· Interdigitated structure; high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
MX0912B351Y Typical Application
Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.
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