MFG:ON Semiconductor Category:Integrated Circuits (ICs) Package Cooled:ON D/C:2009+
NCP3418DR2, NCP3418PDR2, NCP3420DR2G Datasheet download
Category: Integrated Circuits (ICs)
MFG: ON Semiconductor
Package Cooled: ON
D/C: 2009+
Description: IC MOSFET DRIVER DUAL 12V 8-SOIC
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PDF/DataSheet Download
Datasheet: NCP3418DR2
File Size: 92747 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NCP3418PDR2
File Size: 102068 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NCP100
File Size: 106293 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
The NCP3418 and NCP3418A are dual MOSFET gate drivers optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. Each of the drivers is capable of driving a 3000 pF load with a 25 ns propagation delay and a 20 ns transition time.
With a wide operating voltage range, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal, adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as high as 30 V, with transient voltages as high as 35 V. Both gate outputs can be driven low by applying a low logic level to the Output Disable (OD) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection.
The NCP3418A is identical to the NCP3418 except that there is no internal charge pump diode.
The NCP3418 is pin-to-pin compatible with Analog Devices
ADP3418 with the following advantages:
· Faster Rise and Fall Times
· Internal Charge Pump Diode Reduces Cost and Parts Count
· Thermal Shutdown for System Protection
· Integrated OVP
· Internal Pulldown Resistor Suppresses Transient Turn On of Either MOSFET
|
Rating |
Value |
Unit |
| Operating Ambient Temperature, TA |
0 to 85 |
|
| Operating Junction Temperature, TJ (Note 1) |
0 to 150 |
|
| Package Thermal Resistance: SO-8 Junction-to-Case, RJC Junction-to-Ambient, RJA(2-Layer Board) |
45 123 |
/W /W |
| Package Thermal Resistance: SO-8 EP Junction-to-Ambient, RJA (Note 2) |
50 |
/W |
| Storage Temperature Range, TS |
-65 to 150 |
|
| Storage Temperature Range, TS |
-65 to 150 |
|
| Lead Temperature Soldering (10 sec): Reflow (SMD styles only) Standard (Note 3) Lead Free (Note 4) |
240 peak 260 peak |
|
| JEDEC Moisture Sensitivity Level SO-8 (240 peak profile) SO-8 (260 peak profile) SO-8 EP (240 peak profile) SO-8 EP (260 peak profile) |
1 1 1 3 |
- |
1. Internally limited by thermal shutdown, 150 min.
2. Rating applies when soldered to an appropriate thermal area on the PCB.
3. 60 - 180 seconds minimum above 183.
4. 60 - 180 seconds minimum above 237.
*The maximum package power dissipation must be observed.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
· Anti Cross-Conduction Protection Circuitry
· Floating Top Driver Accommodates Boost Voltages of up to 30 V
· One Input Signal Controls Both the Upper and Lower Gate Outputs
· Output Disable Control Turns Off Both MOSFETs
· Complies with VRM 10.x Specifications
· Undervoltage Lockout
· Thermal Shutdown
· Thermally Enhanced Package Available
| Technical/Catalog Information | NCP3420DR2G |
| Vendor | ON Semiconductor |
| Category | Integrated Circuits (ICs) |
| Configuration | High and Low Side, Synchronous |
| Voltage - Supply | 4.6 V ~ 13.2 V |
| Current - Peak | - |
| Delay Time | 30ns |
| Package / Case | 8-SOIC (3.9mm Width) |
| Packaging | Tape & Reel (TR) |
| Number of Outputs | 2 |
| Input Type | Non-Inverting |
| Number of Configurations | 1 |
| Operating Temperature | 0°C ~ 85°C |
| High Side Voltage - Max (Bootstrap) | 12V |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NCP3420DR2G NCP3420DR2G |
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