NDB608BE, NDB610A, NDB610AE
MFG:MOT/ON Package Cooled:TO- D/C:07+
Table of contents:
Part Number: NDB608BE
MFG: MOT/ON
Package Cooled: TO-
D/C: 07+
NDB608BE Supplier
NDB608BE
MFG: FAIRCHILD Qty: 26000
Contact: Ms.SUSIE CHEN 
Tel: 86-755-28536689
Adddate: 2010-03-15
NDB608BE
MFG: MOT/ON Package Cooled: 6000 D/C: TO-
Contact: Ms.lisahuang
Tel: 86-755-83958497
Adddate: 2010-03-15
NDB608BE
MFG: MOT/ON Package Cooled: 05+ D/C: TO- Qty: 5800
Contact: Ms.rena
Tel: 86-755-8279-1230
Adddate: 2010-03-15
NDB608BE
MFG: MOT/ON Package Cooled: TO- Qty: 1120 Note: Delivery
Golden Harbour Industry Limited 
Contact: Mr.sam
Tel: 86-755-83651739,83041561
Adddate: 2010-03-15
NDB608BE
Qty: 26000
Contact: Ms.candychen
Tel: 86-755-28536689
Adddate: 2010-03-15
NDB608BE
MFG: MOT/ON Package Cooled: TO- D/C: 07+ Qty: 5800
Singo(HK)technology Co.,Limited
Contact: Ms.zhang
Tel: 0086-0755-82817286
Adddate: 2010-03-15
NDB3712BE
MFG: 国半 Package Cooled: TO-263 D/C: 9748 Qty: 8590 Note: new and original
HONGKONG HUAXINDA ELECTRONIC CO.,LTD
Contact: Ms.lucyli
Tel: 86+-755-61352265
Adddate: 2010-03-15
About NDB608BE
PDF/DataSheet Download
Datasheet: NDB608BE
File Size: 75673 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDB610AE Supplier
NDB610AE
MFG: FAIRCHILD Qty: 26000
Contact: Ms.SUSIE CHEN
Tel: 86-755-28536689
Adddate: 2010-03-15
NDB610AE
MFG: MOT/ON Package Cooled: 6000 D/C: TO-
Contact: Ms.lisahuang
Tel: 86-755-83958497
Adddate: 2010-03-15
NDB610AE
MFG: MOT/ON Package Cooled: 05+ D/C: TO- Qty: 5800
Contact: Ms.rena
Tel: 86-755-8279-1230
Adddate: 2010-03-15
NDB610AE
MFG: MOT/ON Package Cooled: TO- Qty: 1120 Note: Delivery
Golden Harbour Industry Limited
Contact: Mr.sam
Tel: 86-755-83651739,83041561
Adddate: 2010-03-15
NDB610AE
Qty: 26000
Contact: Ms.candychen
Tel: 86-755-28536689
Adddate: 2010-03-15
NDB610AE
MFG: MOT/ON Package Cooled: TO- D/C: 07+ Qty: 5800
Singo(HK)technology Co.,Limited
Contact: Ms.zhang
Tel: 0086-0755-82817286
Adddate: 2010-03-15
NDB3712BE
MFG: 国半 Package Cooled: TO-263 D/C: 9748 Qty: 8590 Note: new and original
HONGKONG HUAXINDA ELECTRONIC CO.,LTD
Contact: Ms.lucyli
Tel: 86+-755-61352265
Adddate: 2010-03-15
About NDB610AE
PDF/DataSheet Download
Datasheet: NDB610AE
File Size: 75691 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDB610A Supplier
NDB610A
MFG: MOT/ON Package Cooled: 6000 D/C: TO-
Contact: Ms.lisahuang
Tel: 86-755-83958497
Adddate: 2010-03-15
NDB610A
MFG: MOT/ON Package Cooled: 05+ D/C: TO- Qty: 5800
Contact: Ms.rena
Tel: 86-755-8279-1230
Adddate: 2010-03-15
NDB610A
MFG: MOT/ON Package Cooled: TO- Qty: 1120 Note: Delivery
Golden Harbour Industry Limited
Contact: Mr.sam
Tel: 86-755-83651739,83041561
Adddate: 2010-03-15
NDB610A
MFG: fsc Package Cooled: fsc D/C: dc00 Qty: 797
Asia World Trade Technology Source
Contact: Ms.BoningTan
Tel: 086-0755-25573524
Adddate: 2010-03-15
NDB610A
MFG: MOT/ON Package Cooled: TO- D/C: 07+ Qty: 5800
Singo(HK)technology Co.,Limited
Contact: Ms.zhang
Tel: 0086-0755-82817286
Adddate: 2010-03-15
NDB610AE
MFG: FAIRCHILD Qty: 26000
Contact: Ms.SUSIE CHEN
Tel: 86-755-28536689
Adddate: 2010-03-15
NDB610AE
MFG: MOT/ON Package Cooled: 6000 D/C: TO-
Contact: Ms.lisahuang
Tel: 86-755-83958497
Adddate: 2010-03-15
NDB610AE
MFG: MOT/ON Package Cooled: 05+ D/C: TO- Qty: 5800
Contact: Ms.rena
Tel: 86-755-8279-1230
Adddate: 2010-03-15
About NDB610A
PDF/DataSheet Download
Datasheet: NDB610A
File Size: 75691 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDB608BE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB608BE Maximum Ratings
|
Symbol |
Parameter |
NDP608A NDP608AE NDB608A NDB608AE |
NDP608B NDP608BE NDB608B NDB608BE |
Units |
|
VDSS |
Drain-Source Voltage |
80 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS ≤ 1 MΩ) |
80 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 μs) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
36 |
32 |
A |
|
144 |
128 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
100 |
W | |
|
0.67 |
W/℃ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
℃ | |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
℃ | |
NDB608BE Features
·36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB610A General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB610A Maximum Ratings
|
Symbol |
Parameter |
NDP610A NDP610AE NDB610A NDB610AE |
NDP610B NDP610BE NDB610B NDB610BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS ≤ 1 MΩ) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 μs) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
26 |
24 |
A |
|
104 |
96 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
100 |
W | |
|
0.67 |
W/℃ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
℃ | |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
℃ | |
NDB610A Features
·26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDB610AE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDB610AE Maximum Ratings
|
Symbol |
Parameter |
NDP610A NDP610AE NDB610A NDB610AE |
NDP610B NDP610BE NDB610B NDB610BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS ≤ 1 MΩ) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 μs) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
26 |
24 |
A |
|
104 |
96 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
100 |
W | |
|
0.67 |
W/℃ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
℃ | |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
℃ | |
NDB610AE Features
·26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.