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PDF/DataSheet Download
Datasheet: NDS8425
File Size: 271047 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
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| Technical/Catalog Information | NDS8425 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 7.4A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 7.4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1098pF @ 15V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 18nC @ 4.5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS8425 NDS8425 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDS331N | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage - Continuous | 8 | V |
| ID | Maximum Drain Current - Continuous (Note 1a) - Pulsed |
± 7.4 | A |
| ± 20 | |||
| PD | Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
| 1.2 | |||
| 1 | |||
| TJ,TSTG | Operating and Storage Temperature Range | -55 to 150 | ℃ |
| THERMAL CHARACTERISTICS | |||
| RθJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | ℃/W |
| RθJC | Thermal Resistance, Junction-to-Case (Note 1) | 25 | ℃/W |
·7.4 A, 20 V. RDS(ON) = 0.025 Ω @ VGS= 4.5 V.
RDS(ON) = 0.03Ω @ VGS= 2.7V.
·High density cell design for extremely low RDS(ON).
·High power and current handling capability in a widely used surface mount package.
