NE5511279, NE5511279A, NE5511279A-T1 Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:09+
NE5511279, NE5511279A, NE5511279A-T1 Datasheet download
Part Number: NE5511279
MFG: NEC
Package Cooled: N/A
D/C: 09+
NE5511279, NE5511279A, NE5511279A-T1
- Table of contents:
Info of NE5511279
Info of NE5511279A
Info of NE5511279A-T1
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About NE5511279A
PDF/DataSheet Download
Datasheet: NE5511279A
File Size: 102173 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE5511279A
PDF/DataSheet Download
Datasheet: NE5511279A
File Size: 102173 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE5511279A-T1
PDF/DataSheet Download
Datasheet: NE5511279A-T1
File Size: 102173 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NE5511279A General Description
NEC's NE5511279A is an N-Channel silicon power laterally dif fused MOSFET spe cial ly designed as the transmission power amplifier for 7.5 V radio systems. Die are man u - fac tured us ing NEC's NEWMOS1 tech nol o gy and housed in
a surface mount pack age. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz using a 7.5 V supply voltage.
NE5511279A Maximum Ratings
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VDS |
Drain Supply Voltage2 |
V |
20.0 |
|
VGS |
Gate Supply Voltage |
V |
6.0 |
|
ID |
Drain Current |
A |
3.0 |
|
PT |
Total Power Dissipation |
W |
20 |
|
TCH |
Channel Temperature |
°C |
125 |
|
TSTG |
Storage Temperature |
°C |
-55 to +125 |
1. Operation in excess of any one of these parameters may result in permanent damage.
2. VDS must be used under 12 V on RF operation.
NE5511279A Features
• HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH POWER ADDED EFFICIENCY: add = 48% TYP., f = 900 MHz, VDS = 7.5 V, add = 50% TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH LINEAR GAIN: GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V, GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V,
• SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
• HIGH POWER ADDED EFFICIENCY: add = 48% TYP., f = 900 MHz, VDS = 7.5 V, add = 50% TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH LINEAR GAIN: GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V, GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V,
• SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
NE5511279A Typical Application
• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
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