NE69039, NE692N-8, NE696M01 Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:09+
NE69039, NE692N-8, NE696M01 Datasheet download
Part Number: NE69039
MFG: NEC
Package Cooled: N/A
D/C: 09+
NE69039, NE692N-8, NE696M01
- Table of contents:
Info of NE69039
Info of NE692N-8
Info of NE696M01
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About NE69039
PDF/DataSheet Download
Datasheet: NE69039
File Size: 27853 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE600
PDF/DataSheet Download
Datasheet: NE600
File Size: 223213 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About NE696M01
PDF/DataSheet Download
Datasheet: NE696M01
File Size: 108172 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
NE69039 General Description
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX output stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel.
The NE69039 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.
NE69039 Maximum Ratings
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VCEO |
Collector to Emitter Voltage |
V |
9.0 |
|
VCBO |
Collector to Base Voltage |
V |
6.0 |
|
VEBO |
Emitter to Base Voltage |
V |
2.0 |
|
IC |
Collector Current |
mA |
300 |
|
PT |
Total Power Dissipation |
mW |
200 (CW) |
|
Tj |
Junction Temperature |
°C |
150 |
|
TSTG |
Storage Temperature |
°C |
-65 to +125 |
1. Operation in excess of any one of these parameters may result in permanent damage.
NE69039 Features
• OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8
• 4 PIN MINI MOLD PACKAGE: NE69039
• 4 PIN MINI MOLD PACKAGE: NE69039
NE696M01 General Description
NEC's NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT- 363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.
NE696M01 Maximum Ratings
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VCEO |
Collector to Emitter Voltage |
V |
9 |
|
VCBO |
Collector to Base Voltage |
V |
6 |
|
VEBO |
Emitter to Base Voltage |
V |
2 |
|
IC |
Collector Current |
mA |
30 |
|
PT |
Total Power Dissipation |
mW |
150 |
|
Tj |
Junction Temperature |
°C |
150 |
|
TSTG |
Storage Temperature |
°C |
-65 to +125 |
1. Operation in excess of any one of these parameters may result in permanent damage.
NE696M01 Features
• HIGH fT: 14 GHz TYP at 3 V, 10 mA
• LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
• LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
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