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PBYR2100CT, PBYR2100CT(1K/RL) D/C99, PBYR2100CT(TR) D/C99

Table of contents:
Info of PBYR2100CT
Info of PBYR2100CT(1K/RL) D/C99
Info of PBYR2100CT(TR) D/C99

PBYR2100CT, PBYR2100CT(1K/RL) D/C99, PBYR2100CT(TR) D/C99 Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:263 D/C:06+

PBYR2100CT, PBYR2100CT(1K/RL) D/C99, PBYR2100CT(TR) D/C99 Picture

PBYR2100CT, PBYR2100CT(1K/RL) D/C99, PBYR2100CT(TR) D/C99 Datasheet download

Five Points

Part Number: PBYR2100CT

MFG: PHILIPS

Package Cooled: 263

D/C: 06+

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PBYR2100CT General Description

Schottky barrier double diode fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package.

PBYR2100CT Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per diode
V_R	continuous reverse voltage		-	100	V
V_RRM	repetitive peak reverse voltage		-	100	V
V_RWM	crest working reverse voltage		-	100	V
I_F(AV)	average forward current	T_amb = 85 °C; R_{th j-a} = 70 K/W; note 1; V_R(equiv) = 0.2 V; note 2	-	1	A
I_FSM	non-repetitive peak forward current	t = 8.3 ms half sinewave; JEDEC method	-	10	°C
I_RSM	non-repetitive peak reverse current	t_p = 100 s	-	0.5	°C
T_stg	storage temperature		-	+150	°C
T_j	junction temperature		-	+150	°C
T_amb	operating ambient temperature		-	85	°C

Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and I_F(AV) rating will be available on request.

PBYR2100CT Features

· Low switching losses
· High breakdown voltage
· Fast recovery time
· Guard ring protected
· Plastic SMD package.

PBYR2100CT Typical Application

· Low power, switched-mode power supplies
· Rectification
· Polarity protection.

PBYR2100CT Connection Diagram

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