PEMD6, PEMD6.115, PEMH10 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:2007+ROHS D/C:08+
PEMD6, PEMD6.115, PEMH10 Datasheet download

Part Number: PEMD6
MFG: PHILIPS
Package Cooled: 2007+ROHS
D/C: 08+
MFG:PHILIPS Package Cooled:2007+ROHS D/C:08+
PEMD6, PEMD6.115, PEMH10 Datasheet download

MFG: PHILIPS
Package Cooled: 2007+ROHS
D/C: 08+
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PDF/DataSheet Download
Datasheet: PEMD6
File Size: 56689 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PEMB1
File Size: 47085 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PEMH10
File Size: 55957 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| Per transistor; for the PNP transistor with negative polarity | |||||
| VCBO | collector-base voltage |
open emitter |
- |
50 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
50 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
10 |
V |
| Vi | input voltage TR1 positive negative |
- - - - |
+40 -10 +10 -40 |
V V V V | |
| input voltage TR2 positive negative |
|||||
| IO | collector current (DC) |
- |
-100 |
mA | |
| ICM | peak base current |
- |
100 |
mA | |
| Ptot | total power dissipation |
Tamb 25 °C; note 1 |
- |
200 |
mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
150 |
°C | |
| Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
| Per device | |||||
| Ptot | total power dissipation |
Tamb25 °C; note 1 |
- |
300 |
mW |

|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| Per transistor | |||||
| VCBO | collector-base voltage |
open emitter |
- |
50 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
50 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
10 |
V |
| Vi | input voltage positive negative |
- - |
+12 -5 |
V V | |
| IO | output current (DC) |
- |
100 |
mA | |
| ICM | peak collector current |
- |
100 |
mA | |
| Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C note 1 notes 1 and 2 |
- - |
200 200 |
mW mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
150 |
°C | |
| Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
| Per device | |||||
| Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C note 1 notes 1 and 2 |
- - |
300 300 |
mW mW |

