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PEMH11, PEMH13, PEMH2

Table of contents:
Info of PEMH11
Info of PEMH13
Info of PEMH2

PEMH11, PEMH13, PEMH2 Selling Leads, Datasheet

MFG:PHI Package Cooled:SOT-463 D/C:dc03

PEMH11, PEMH13, PEMH2 Datasheet download

Five Points

Part Number: PEMH11

MFG: PHI

Package Cooled: SOT-463

D/C: dc03

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PEMH11 General Description

NPN resistor-equipped transistors in a SOT666 plastic package.

PEMH11 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor
V_CBO	collector-base voltage	open emitter	-	50	V
V_CEO	collector-emitter voltage	open base	-	50	V
V_EBO	emitter-base voltage	open collector	-	10	V
Vi	input voltage positive negative		- -	+40 -10	V V
I_O	output current (DC)		-	100	mA
I_CM	peak collector current		-	100	mA
P_tot	total power dissipation	Tamb 25 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C
Per device
P_tot	total power dissipation	Tamb 25 °C note 1	-	300	mW

Note
1. Transistor mounted on an FR4 printed-circuit board.

PEMH11 Features

· 300 mW total power dissipation
· Very small 1.6 ×1.2 mm ultra thin package
· Self alignment during soldering due to straight leads
· Replaces two SC-75/SC-89 packaged transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs.

PEMH11 Typical Application

· General purpose switching and amplification
· Inverter and interface circuits
· Circuit driver.

PEMH11 Connection Diagram

PEMH13 General Description

NPN resistor-equipped transistors in a SOT666 plastic package.

PEMH13 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor
V_CBO	collector-base voltage	open emitter	-	50	V
V_CEO	collector-emitter voltage	open base	-	50	V
V_EBO	emitter-base voltage	open collector	-	10	V
Vi	input voltage positive negative		- -	+30 -5	V V
I_O	output current (DC)		-	100	mA
I_CM	peak collector current		-	100	mA
P_tot	total power dissipation	Tamb 25 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C
Per device
P_tot	total power dissipation	Tamb 25 °C; note 1	-	300	mW

Note
1. Transistor mounted on an FR4 printed-circuit board.

PEMH13 Features

· 300 mW total power dissipation
· Very small 1.6 ×1.2 mm ultra thin package
· Improved thermal behaviour due to flat leads
· Self alignment during soldering due to straight leads
· Replaces two SC-75/SC-89 packaged transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs.

PEMH13 Typical Application

· General purpose switching and amplification
· Inverter and interface circuits
· Circuit driver.

PEMH13 Connection Diagram

PEMH2 General Description

NPN resistor-equipped transistors in a SOT666 plastic package.

PEMH2 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
Per transistor
V_CBO	collector-base voltage	open emitter	-	50	V
V_CEO	collector-emitter voltage	open base	-	50	V
V_EBO	emitter-base voltage	open collector	-	10	V
V_i	input voltage positive negative		- -	+40 -10	V V
I_C	collector current (DC)		-	100	mA
I_CM	peak collector current		-	100	mA
P_tot	total power dissipation	Tamb 25 °C; note 1	-	200	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C
Per device
P_tot	total power dissipation	Tamb 25 °C; note 1	-	300	mW

Note
1. Transistor mounted on an FR4 printed-circuit board.

PEMH2 Features

· 300 mW total power dissipation
· Very small 1.6 ´ 1.2 mm ultra thin package
· Self alignment during soldering due to straight leads
· Replaces two SC-75/SC-89 packaged transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs.

PEMH2 Typical Application

· General purpose switching and amplification
· Inverter and interface circuits
· Circuit driver.

PEMH2 Connection Diagram

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