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PH1090-15L, PH1090-175L, PH1090-350L

PH1090-15L, PH1090-175L, PH1090-350L Selling Leads, Datasheet

MFG:M/A-Com  Package Cooled:N/A  D/C:08+

PH1090-15L, PH1090-175L, PH1090-350L Picture

PH1090-15L, PH1090-175L, PH1090-350L Datasheet download

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Part Number: PH1090-15L

 

MFG: M/A-Com

Package Cooled: N/A

D/C: 08+

 

 

 
 
 
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PH1090-15L Suppliers

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  • PH1090-15L

  • Vendor: MACOM D/C: 07+& Qty: 5000  Adddate: 2024-03-28
  • Inquire Now
  • Zion Components   United
    Contact: Mr.George Ferreira  
    Tel: 954-234-7783
    Fax: 954-622-9773
    (63)

About PH1090-15L

PDF/DataSheet Download

Datasheet: PH1090-15L

File Size: 93285 KB

Manufacturer: MACOM [Tyco Electronics]

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PH1090-175L Suppliers

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About PH1090-175L

PDF/DataSheet Download

Datasheet: PH1090-175L

File Size: 42906 KB

Manufacturer: MACOM [Tyco Electronics]

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PH1090-350L Suppliers

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About PH1090-350L

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Datasheet: PH1090-350L

File Size: 64287 KB

Manufacturer: MACOM [Tyco Electronics]

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PH1090-15L Maximum Ratings

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 70 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current IC 1 A
Total Power Dissipation PD 32 W
Storage Temperature TSTG -65 to +200
Junction Temperature Tj 200

PH1090-15L Features

• Designed for Pulsed Avionics Applications
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

PH1090-175L Maximum Ratings

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 80 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 10.5 A
Total Power Dissipation @ +25 PTOT 375 W
Storage Temperature Tstg -65 to +200
Junction Temperature Tj 200

PH1090-175L Features

·  NPN Silicon Microwave Power Transistor
·  Common Base Configuration
·  Broadband Class C Operation
·  High Efficiency Interdigitated Geometry
·  Diffused Emitter Ballasting Resistors
·  Gold Metalization System
·  Internal Input and Output Impedance Matching
·  Hermetic Metal/Ceramic Package

PH1090-350L General Description

M/A-COM's PH1090-350L is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C, broadband pulsed power applications, the PH1090-350L delivers 7.5 dB of gain at 350 watts of output power when operating with long pulse length (250µS), at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.

PH1090-350L Maximum Ratings

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 80 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 17 A
Total Power Dissipation @ +25 PTOT 750 W
Storage Temperature Tstg -65 to +200
Junction Temperature Tj 200

PH1090-350L Features

• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

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