PH111.007A, PH111.008, PH1113-100 Selling Leads, Datasheet
MFG:PHI Package Cooled:DIP D/C:03
PH111.007A, PH111.008, PH1113-100 Datasheet download
Part Number: PH111.007A
MFG: PHI
Package Cooled: DIP
D/C: 03
PH111.007A, PH111.008, PH1113-100
- Table of contents:
Info of PH111.007A
Info of PH111.008
Info of PH1113-100
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About PH100F24
PDF/DataSheet Download
Datasheet: PH100F24
File Size: 98343 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About PH100F24
PDF/DataSheet Download
Datasheet: PH100F24
File Size: 98343 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About PH1113-100
PDF/DataSheet Download
Datasheet: PH1113-100
File Size: 63807 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
PH1113-100 General Description
M/A-COM's PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars. Designed for common-base, class C, broadband pulsed power applications, the PH1113-100 can produce 25 watts of output power with short pulse length (3S) at 30 percent duty cycle. The transistor is housed in a 2-lead rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
PH1113-100 Maximum Ratings
| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 70 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC | 9.0 | A |
| Total Power Dissipation @ +25 | PTOT | 350 | W |
| Storage Temperature | Tstg | -65 to +200 | |
| Junction Temperature | Tj | 200 |
PH1113-100 Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
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