PH1214-220M, PH1214-25M, PH1214-40M Selling Leads, Datasheet
MFG:Philips Package Cooled:MA-COM D/C:04+
PH1214-220M, PH1214-25M, PH1214-40M Datasheet download

Part Number: PH1214-220M
MFG: Philips
Package Cooled: MA-COM
D/C: 04+
MFG:Philips Package Cooled:MA-COM D/C:04+
PH1214-220M, PH1214-25M, PH1214-40M Datasheet download

MFG: Philips
Package Cooled: MA-COM
D/C: 04+
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PDF/DataSheet Download
Datasheet: PH1214-220M
File Size: 52725 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH1214-25M
File Size: 49630 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH1214-40M
File Size: 50881 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
M/A-COM's PH1214-220M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-220M can produce 220 watts of output power with medium pulse length (150S) at 10 percent duty cycle. The transistor is housed in a 2-lead rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 70 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC | 21.0 | A |
| Total Power Dissipation @ +25 | PTOT | 600 | W |
| Storage Temperature | Tstg | -65 to +200 | |
| Junction Temperature | Tj | 200 |
M/A-COM's PH1214-25M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-25M can produce 25 watts of output power with medium pulse length (150 S) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. In addition to L-band pulsed radars, this high performance transistor can also be used in pulsed digital communication systems.
| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 60 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC | 2.8 | A |
| Total Power Dissipation @ +25 | PTOT | 58 | W |
| Storage Temperature | Tstg | -65 to +200 | |
| Junction Temperature | Tj | 200 |
M/A-COM's PH1214-40M is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-40M can produce 40 watts of output power with medium pulse-length (150µS) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assures ruggedness and long-term reliability.
| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 70 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC | 3.0 | A |
| Total Power Dissipation @ +25 | PTOT | 88 | W |
| Storage Temperature |
Tstg | -65 to +200 | |
| Junction Temperature | Tj | 200 |
