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PH1214-220M, PH1214-25M, PH1214-40M

PH1214-220M, PH1214-25M, PH1214-40M Selling Leads, Datasheet

MFG:Philips  Package Cooled:MA-COM  D/C:04+

PH1214-220M, PH1214-25M, PH1214-40M Picture

PH1214-220M, PH1214-25M, PH1214-40M Datasheet download

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Part Number: PH1214-220M

 

MFG: Philips

Package Cooled: MA-COM

D/C: 04+

 

 

 
 
 
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About PH1214-220M

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Datasheet: PH1214-220M

File Size: 52725 KB

Manufacturer: MACOM [Tyco Electronics]

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Datasheet: PH1214-25M

File Size: 49630 KB

Manufacturer: MACOM [Tyco Electronics]

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Datasheet: PH1214-40M

File Size: 50881 KB

Manufacturer: MACOM [Tyco Electronics]

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PH1214-220M General Description

M/A-COM's PH1214-220M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-220M can produce 220 watts of output power with medium pulse length (150S) at 10 percent duty cycle. The transistor is housed in a 2-lead rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.

PH1214-220M Maximum Ratings

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 70 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 21.0 A
Total Power Dissipation @ +25 PTOT 600 W
Storage Temperature Tstg -65 to +200
Junction Temperature Tj 200

PH1214-220M Features

• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

PH1214-25M General Description

M/A-COM's PH1214-25M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-25M can produce 25 watts of output power with medium pulse length (150 S) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. In addition to L-band pulsed radars, this high performance transistor can also be used in pulsed digital communication systems.

PH1214-25M Maximum Ratings

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 2.8 A
Total Power Dissipation @ +25 PTOT 58 W
Storage Temperature Tstg -65 to +200
Junction Temperature Tj 200

PH1214-25M Features

• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

PH1214-40M General Description

M/A-COM's PH1214-40M is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-40M can produce 40 watts of output power with medium pulse-length (150µS) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assures ruggedness and long-term reliability.

PH1214-40M Maximum Ratings

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 70 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 3.0 A
Total Power Dissipation @ +25 PTOT 88 W
Storage Temperature
Tstg -65 to +200
Junction Temperature Tj 200

PH1214-40M Features

• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package

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