PH1214-80M, PH13005, PH13007 Selling Leads, Datasheet
MFG:MA/COM Package Cooled:N/A D/C:08+
PH1214-80M, PH13005, PH13007 Datasheet download
Part Number: PH1214-80M
MFG: MA/COM
Package Cooled: N/A
D/C: 08+
PH1214-80M, PH13005, PH13007
- Table of contents:
Info of PH1214-80M
Info of PH13005
Info of PH13007
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About PH1214-80M
PDF/DataSheet Download
Datasheet: PH1214-80M
File Size: 53802 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
About PH100F24
PDF/DataSheet Download
Datasheet: PH100F24
File Size: 98343 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About PH100F24
PDF/DataSheet Download
Datasheet: PH100F24
File Size: 98343 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PH1214-80M General Description
M/A-COM's PH1214-80M is a silicon bipolar NPN power transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-80M can produce 80 watts of output power with medium pulse length (150 µS) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Dissued emitter ballast resistors and gold metalization assure ruggedness and long-term reliability. In addition to L-band pulsed radars, this high performance power transistor can also be used in pulsed digital communications systems.
PH1214-80M Maximum Ratings
| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 70 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC |
6.4 |
A |
| Total Power Dissipation @ +25 | PTOT | 185 | W |
| Storage Temperature |
Tstg | -65 to +200 | |
| Junction Temperature | Tj | 200 |
PH1214-80M Features
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
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