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PH1819-2, PH1819-45A, PH1819-60

Table of contents:
Info of PH1819-2
Info of PH1819-45A
Info of PH1819-60

PH1819-2, PH1819-45A, PH1819-60 Selling Leads, Datasheet

MFG:Philips D/C:00+

PH1819-2, PH1819-45A, PH1819-60 Datasheet download

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Part Number: PH1819-2

MFG: Philips

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D/C: 00+

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PH1819-2 Maximum Ratings

Parameter	Symbol	Rating	Units
Collector-Base Voltage	V_CEO	65	V
Collector-Emitter Voltage	V_CES	65	V
Emitter-Base Voltage	V_EBO	3.0	V
Collector Current	I_C	2.0	A
Power Dissipation	P_D	13.5	W
JunctionTemperature	T_J	200
Storage Temperature	T_stg	-50 to +150
Thermal Resistance	_JC	13	/W

PH1819-2 Features

·Designed for Cellular Base Station Applications
·Class AB: -34 dBc Typ 3rd IMD at 2 Watts PEP
·Class A: +43 dBm Typ 3rd Order Intercept Point
·Common Emitter Configuration
·Internal Input Impedance Matching
·Diffused Emitter Ballasting

PH1819-45A General Description

M/A-COM's PH11819-45A is a high efficiency silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805 to 1880 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballasting and gold metalization. The PH1819-45A is packaged in a low cost, non-hermetic ceramic package which has a very low thermal impedance.

PH1819-45A Maximum Ratings

Parameter	Symbol	Rating	Units
Collector-Base Voltage	V_CEO	20	V
Collector-Emitter Voltage	V_CES	65	V
Emitter-Base Voltage	V_EBO	3.0	V
Collector Current	I_C	4.0	A
Power Dissipation	P_D	117	W
Storage Temperature	T_stg	-50 to +150
Junction Temperature	T_J	200
Thermal Resistance	_jc	1.5	/W

PH1819-45A Features

• NPN Silicon Microwave Power Transistor
• -28 dBc Typical 3^rdIMD at 45 Watts PEP
• Common Emitter Class AB Operation
• Internal Input and Output Impedance Matching
• Diffused Emitter Ballasting
• Gold Metalization System

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