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PH320, PH3230S, PH3230T3

PH320, PH3230S, PH3230T3 Selling Leads, Datasheet

MFG:NEC  Package Cooled:SIDE-DIP-2  D/C:08+ ROHS

PH320, PH3230S, PH3230T3 Picture

PH320, PH3230S, PH3230T3 Datasheet download

Five Points

Part Number: PH320

 

MFG: NEC

Package Cooled: SIDE-DIP-2

D/C: 08+ ROHS

 

 

 
 
 
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About PH320

PDF/DataSheet Download

Datasheet: PH320

File Size: 30122 KB

Manufacturer: NEC [NEC]

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PH3230S Suppliers

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  • PH3230S

  • Vendor: Philips D/C: 05+& Qty: 1098 Note: Long-Term Stock  Adddate: 2024-04-28
  • Inquire Now
  • Free-Sky (HK) Electronics Co.,LTD   China
    Contact: Ms.sammy   MSN:sammy_fsky@hotmail.com
    Tel: 0086-755-82814553
    Fax: 0086-755-82814556
    (786)
  • PH3230S

  • Vendor: PHILIPS D/C: 09+& Qty: 15000  Adddate: 2024-04-28
  • Inquire Now
  • ao chuang electronic   China
    Contact: Mr.Ms,Zhao   MSN:aochuang.dz@msn.cn
    Tel: 86-755-83281916
    Fax: 86-755-83281916
    (26)

About PH3230S

PDF/DataSheet Download

Datasheet: PH3230S

File Size: 99789 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PH300

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Datasheet: PH300

File Size: 68451 KB

Manufacturer: ETC [ETC]

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PH3230S General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.

PH3230S Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 30 V
VGS gate-source voltage   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 100 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 63 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 300 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 156 A
Avalanche ruggedness
EDS(AL)R repetitive drain-source avalanche
energy
Tj = 25 ; RGS 50 W; IDS(AL)R = 5 A;
VDD = 15 V; duty < 0.1%
- 2.5 mJ
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 50 A; VDD 15 V; RGS = 50 ;
VGS = 10 V;starting Tj = 25 °C
- 250 mJ

PH3230S Features

·Logic level compatible
·High density mounting
·Low gate charge
·Very low on-state resistance.

PH3230S Typical Application

·DC-to-DC converters
·Notebook computers
·Switched-mode power supplies
·Computer motherboards.

PH3230S Connection Diagram

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