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·Low noise ·Interchangeability of drain and source connections ·High gain.
PN4416 Typical Application
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PN4416 Connection Diagram
PN4416A General Description
N-channel symmetrical silicon junction FETs in a SOT54 envelope.These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers.
PN4416A Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage PN4416 PN4416A
- -
30 35
V V
VGSO
gate-source voltage PN4416 PN4416A
- -
-30 -35
V V
VGDO
gate-drain voltage PN4416 PN4416A
- -
-30 -35
V V
IG
DC forward gate current
-
10
mA
Ptot
total power dissipation
up to Tamb = 25 °C (note 1)
-
400
mW
Tstg
storage temperature
-65
+150
Tj
junction temperature
-
150
PN4416A Features
·Low noise ·Interchangeability of drain and source connections ·High gain.
PN4416A Typical Application
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.