PS21352-G, PS21352-N, PS21353 Selling Leads, Datasheet
MFG:MITSUBISHI D/C:07+
PS21352-G, PS21352-N, PS21353 Datasheet download

Part Number: PS21352-G
MFG: MITSUBISHI
Package Cooled:
D/C: 07+
MFG:MITSUBISHI D/C:07+
PS21352-G, PS21352-N, PS21353 Datasheet download

MFG: MITSUBISHI
Package Cooled:
D/C: 07+
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PDF/DataSheet Download
Datasheet: PS21352-G
File Size: 91759 KB
Manufacturer: POWEREX [Powerex Power Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PS21352-N
File Size: 184779 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PS21353-G
File Size: 91752 KB
Manufacturer: POWEREX [Powerex Power Semiconductors]
Download : Click here to Download
DIP and mini-DIP IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compact dual-in-line transfer-mold package for use in driving small three phase motors. Use of 4th generation IGBTs, DIP packaging, and application specific HVICs allow the designer to reduce inverter size and overall design time.
| Characteristics |
Symbol |
PS21255-E |
Units |
| Power Device Junction Temperature* Storage Temperature Heatsink Temperature (See Tf Measure Point Illustration) Mounting Torque, M3 Mounting Screws Module Weight (Typical) Heatsink Flatness Self-protection Supply Voltage Limit (Short Circuit Protection Capability)** Isolation Voltage, AC 1 minute, 60Hz Sinusoidal, Connection Pins to Heatsink Plate |
Tj Tstg Tf - - - VCC(prot.) VISO |
-20 to 150 -40 to 125 -20 to 100 8.5 20 -50 to 100 400 1500 |
°C °C °C in-lb Grams µm Volts Volts |
| IGBT Inverter Sector | |||
| Collector-Emitter Voltage Collector Current, ± (TC = 25°C) Peak Collector Current, ± (TC = 25°C, Instantaneous Value (Pulse)) Supply Voltage (Applied between P - N) Supply Voltage, Surge (Applied between P - N) Collector Dissipation (TC = 25°C, per 1 Chip) |
VCES IC ICP VCC VCC(surge) PC |
600 5 10 450 500 20 |
Volts Amperes Amperes Volts Volts Watts |
| Control Sector | |||
| Supply Voltage (Applied between VP1-VNC, VN1-VNC) Supply Voltage (Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS) Input Voltage (Applied between UP, VP, WP-VNC, UN, VN, WN-VNC) Fault Output Supply Voltage (Applied between FO-VNC) Fault Output Current (Sink Current at FO Terminal) Current Sensing Input Voltage (Applied between CIN-VNC) |
VD VDB VCIN VFO IFO VSC |
20 20 -0.5 ~ 5.5 -0.5 ~ VD+0.5 15 -0.5 ~ VD+0.5 |
Volts Volts Volts Volts mA Volts |
| Symbol | Parameter | Condition | Ratings | Unit |
| VCC | Supply voltage | Applied between P-N | 450 | V |
| VCC(surge) | Supply voltage (surge) | Applied between P-N | 500 | V |
| VCES | Collector-emitter voltage | 600 | V | |
| ±IC | Each IGBT collector current | Tf = 25°C | 5 | A |
| ±ICP | Each IGBT collector current (peak) | Tf = 25°C, instantaneous value (pulse) | 10 | A |
| PC | Collector dissipation | Tf = 25°C, per 1 chip | 20 | W |
| Tj | Collector-emitter voltage | (Note 1) | 20~+150 | °C |
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ Tf 100°C). However, to 2ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) 125°C (@ Tf 100°C).
