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The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package).
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
PS2581L1 Maximum Ratings
Parameter
Symbol
Ratings
Unit
Diode
Reverse Voltage
VR
80
V
Forward Current (DC)
IF
6
mA
Power Dissipation Derating
∆PC/°C
1.5
mW/°C
Power Dissipation
PD
150
mW/ch
Peak Forward Current*1
IFP
1
A
Transistor
Collector to Emitter Voltage
VCEO
80
V
Emitter to Collector Voltage
VECO
7
V
Collector Current
IC
50
mA
Power Dissipation Derating
∆PC/°C
1.5
mW/°C
Power Dissipation
PC
150
mW/ch
Isolation Voltage*2
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
-55 to +100
°C
Storage Temperature
Tstg
-55 to +150
°C
*1 PW = 100 ms, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
PS2581L1 Features
• Long creepage and clearance distance (8 mm) • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 ms TYP., tf = 5 ms TYP.) • High current transfer ratio (CTR = 200 % TYP.) • UL approved: File No. E72422 (S) • CSA approved: No. 101391 • BSI approved: No. 8243/8244 • NEMKO approved: No. P97103006 • DEMKO approved: No. 307269 • SEMKO approved: No. 9741154/01 • FIMKO approved: No. 018277 • VDE0884 approved