PS2845-4A, PS2861-1, PS2861-1-A Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:09+
PS2845-4A, PS2861-1, PS2861-1-A Datasheet download

Part Number: PS2845-4A
MFG: NEC
Package Cooled: N/A
D/C: 09+
MFG:NEC Package Cooled:N/A D/C:09+
PS2845-4A, PS2861-1, PS2861-1-A Datasheet download

MFG: NEC
Package Cooled: N/A
D/C: 09+
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Datasheet: PS2845-4A
File Size: 352447 KB
Manufacturer: CEL [California Eastern Labs]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PS2861-1
File Size: 142638 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PS2
File Size: 57193 KB
Manufacturer:
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The PS2845-4A is an optically coupled isolator containing GaAs light emitting diodes and NPN silicon phototransistors.
This product includes four channels in a single package for high-density mounting applications.
The PS2845-4A is the world's smallest class of photocouplers and realizes about 50% reduction in mounting area compared with the PS280x and PS281x Series.
| Parameter | Symbol | Ratings | Unit |
| DiodeForward Current (DC) | IF | ±20 | mA/ch |
| Diode Power Dissipation | IF /°C | 0.2 | mA /°C |
| Diode Peak Forward Current *1 | IFP | ±0.5 | A |
| Transistor Collector to Emitter Voltage | VCEO | 70 | V |
| Transistor Emitter to Collector Voltage | VECO | 5 | V |
| Transistor Collector Current | IC | 20 | mW/ch |
| Transistor Power Dissipation Derating | PC/°C | 0.4 | mW/°C |
| Transistor Power Dissipation | PC | 40 | mW/ch |
| Isolation Voltage *3 | BV | 1500 | Vr.m.s. |
| Operating Ambient Temperature | TA | -40 to +80 | °C |
| Storage Temperature | Tstg | -40 to +100 | °C |

NEC's PS2861-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This device's insulation thickness of 0.4 mm meets BSI's
supplementary insulation requirements. This package is mounted in a plastic SOP (Small Out-line Package) for high density applications and has a shield effect to cut off ambient light.
| Diode | PART NUMBER | PS2861-1 | ||||
| SYMBOLS | PARAMETERS | UNITS | MIN | TYP | MAX | |
| VF | Forward Voltage, IF = 5 mA | V | 1.1 | 1.4 | ||
| IR | Reverse Current, VR = 5 V | µA | 5 | |||
| Ct | Terminal Capacitance, V = 0, f = 1 | MHz | ||||
| Transistor | ICEO | Collector to Emitter Dark Current, VCE = 40 V, IF = 0 mA | nA | 100 | ||
| Coupled | CTR | Current Transfer Ratio (IC/IF)1, IF = 5 mA, VCE = 5 V | % | 50 | 200 | 400 |
| VCE (sat) | Collector Saturation Voltage, IF = 10 mA, IC = 2 mA | V | 0.3 | |||
| RI-O | Isolation Resistance, VI-O = 1 kVDC | 1011 | ||||
| CI-O | Isolation Capacitance, V = 0, f = 1 MHZ | pF | 0.4 | |||
| tr | Rise Time2, VCC = 5 V, IC = 2 mA, RL = 100 |
µs | 4 | |||
| tf | Fall Time2, VCC = 5 V, IC = 2 mA, RL = 100 | µs | 5 |
