PSMN004-55W, PSMN004-60B, PSMN004-60P Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT429/TO-247 D/C:TO
PSMN004-55W, PSMN004-60B, PSMN004-60P Datasheet download
Part Number: PSMN004-55W
MFG: NXP
Package Cooled: SOT429/TO-247
D/C: TO
MFG:NXP Package Cooled:SOT429/TO-247 D/C:TO
PSMN004-55W, PSMN004-60B, PSMN004-60P Datasheet download
MFG: NXP
Package Cooled: SOT429/TO-247
D/C: TO
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PSMN004-55W
File Size: 127680 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PSMN004-60B
File Size: 286550 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PSMN004-60P
File Size: 286550 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SiliconMAX products use the latestPhilips Trench technology to achieve the lowest possibleon-state resistance in each package at each voltage rating.
SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage (DC) | 25 Tj 175 |
- |
60 |
V |
VDGR |
drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k |
- |
60 |
V |
VGS |
gate-source voltage (DC) |
- |
± 20 |
V | |
VGSM |
gate-source voltage | tp50 ms; pulsed; duty cycle 25%; T j 150 |
- |
± 30 |
V |
ID |
drain current (DC) | Tmb = 25; VGS = 10 V; Figure 2 and 3 |
- |
75 |
A |
Tmb = 100; VGS = 10 V; Figure 2 |
- |
75 |
A | ||
IDM |
peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 |
- |
400 |
A |
Ptot |
total power dissipation | Tmb = 25 ; Figure 1 |
- |
230 |
W |
Tstg |
storage temperature |
-55 |
+175 |
||
Tj |
junction temperature |
-55 |
+175 |
||
Source-drain diode | |||||
IS |
source (diode forward) current (DC) | Tmb = 25 |
- |
75 |
A |
ISM |
peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10s |
- |
400 |
A |
Avalanche ruggedness | |||||
EDS(AL)S |
non-repetitive avalanche current | unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- |
500 |
mJ |
IDS(AL)S |
non-repetitive avalanche current | unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- |
75 |
A |