PSMN006-20K, PSMN00875B, PSMN008-75B Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:2006+ D/C:540
PSMN006-20K, PSMN00875B, PSMN008-75B Datasheet download
Part Number: PSMN006-20K
MFG: PHILIPS
Package Cooled: 2006+
D/C: 540
MFG:PHILIPS Package Cooled:2006+ D/C:540
PSMN006-20K, PSMN00875B, PSMN008-75B Datasheet download
MFG: PHILIPS
Package Cooled: 2006+
D/C: 540
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PDF/DataSheet Download
Datasheet: PSMN006-20K
File Size: 246620 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PSM
File Size: 183846 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: PSMN008-75B
File Size: 135833 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN006-20K in SOT96-1 (SO8).
SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage (DC) | 25 Tj 150 °C |
- |
20 |
V |
ID |
drain current (DC) | Tsp = 25 ; VGS = 4.5 V; Figure 2 and 3 |
- |
32 |
A |
VGS |
Gate-source voltage |
- |
± 10 |
V | |
IDM |
peak drain current | Tsp = 25 ; pulsed; tp 10 ms; Figure 3 |
- |
60 |
A |
Ptot |
total power dissipation | Tsp = 25 ; Figure 1 |
- |
8.3 |
W |
Tstg |
storage temperature |
- |
150 |
||
Tj |
operating junction temperature |
-55 |
+150 |
||
Source-drain diode | |||||
IS |
source (diode forward) current (DC | Tsp = 25 |
- |
7.5 |
A |
ISM |
peak source (diode forward) current | Tsp = 25; pulsed; tp 10 s |
- |
30 |
A |
SYMBOL |
PARAMETER |
CONDITIONS |
Min |
Max |
UNIT |
VDS |
drain-source voltage (DC) | Tj = 25 to 175 |
- |
75 |
V |
VDGR |
Drain-gate voltage(DC) | Tj= 25 to 175; RGS = 20 k |
- |
75 |
V |
VGS |
Gate-source voltage(DC) |
- |
75 |
A | |
ID |
drain current (DC) | Tmb = 25; VGS = 10 V; Figure 2 and 3 |
- |
75 |
A |
Tmb = 100; VGS = 10 V; Figure 2 and 3 |
- |
53 |
A | ||
IDM |
peak drain current | Tmb = 25; pulsed; tp 10 s; Figure 2 and 3 |
- |
240 |
A |
Ptot |
total power dissipation | Tmb = 25; Figure 1 |
- |
230 |
W |
Tstg |
storage temperature |
-55 |
+175 |
||
Tj |
operating junction temperature |
-55 |
+75 |
||
Source-drain diode | |||||
IS |
source (diode forward) current (DC) | Tmb = 25 |
- |
75 |
A |
ISM |
peak source (diode forward) current |
Tmb = 25; pulsed; tp 10 s |
- |
240 |
A |
Avalanche ruggedness | |||||
EAS |
non-repetitive avalanche energy | Tmb = 25unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25; Figure 4 |
- |
360 |
mJ |
IAS |
non-repetitive avalanche current | unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 10 V; Figure 4 |
- |
75 |
A |