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PSMN015-110P, PSMN020-150W, PSMN025-100D

Table of contents:
Info of PSMN015-110P
Info of PSMN020-150W
Info of PSMN025-100D

PSMN015-110P, PSMN020-150W, PSMN025-100D Selling Leads, Datasheet

MFG:NXP Package Cooled:SOT78/TO-220AB D/C:04

PSMN015-110P, PSMN020-150W, PSMN025-100D Picture

PSMN015-110P, PSMN020-150W, PSMN025-100D Datasheet download

Five Points

Part Number: PSMN015-110P

MFG: NXP

Package Cooled: SOT78/TO-220AB

D/C: 04

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PSMN015-110P General Description

SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

PSMN015-110P Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage (DC)	25 T_j 175	-	110	V
V_DGR	drain-gate voltage (DC)	25 T_j 175 ; R_GS= 20 k	-	100	V
V_GS	gate-source voltage (DC)		-	± 20	V
I_D	drain current (DC)	T_mb = 25 ; V_GS= 10 V; Figure 2 and 3	-	75	A
I_D	drain current (DC)	T_mb = 100 ; V_GS = 10 V; Figure 2	-	60.8	A
I_DM	peak drain current	T_mb = 25 ; pulsed; t_p 10 s; Figure 3	-	240	A
P_tot	total power dissipation	T_mb = 25 ; Figure 1	-	300	W
T_stg	storage temperature		-55	+175
T_j	junction temperature		-55	+175
Source-drain diode
I_S	source (diode forward) current (DC)	T_mb = 25	-	75	A
I_SM	peak source (diode forward) current	T_mb = 25 ; pulsed; t_p 10s	-	240	A
Avalanche ruggedness
E_DS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; I_D = 36 A; t_p = 0.11 ms; V_DD 50 V; R_GS = 50; V_GS = 10 V; starting T_j= 25	-	320	mJ

PSMN015-110P Features

· Low on-state resistance
· Low gate charge.

PSMN015-110P Typical Application

· DC-to-DC converters
· Switched-mode power supplies.

PSMN015-110P Connection Diagram

PSMN020-150W General Description

SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.

PSMN020-150W Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DSS	Drain-source voltage	T_j = 25 to 175	-	150	V
V_DGR	Drain-gate voltage	T_j= 25 to 175; R_GS= 20 k	-	150	V
V_GS	Gate-source voltage		-	± 20	V
I_D	Continuous drain current	T_mb = 25 ; V_GS = 10 V	-	73	A
		T_mb= 100; V_GS= 10 V	-	51	A
I_DM	Pulsed drain current	T_mb= 25	-	290	A
P_D	Total power dissipation	T_mb = 25	-	300	W
T_j, T_stg	Operating junction andstorage temperature		-55	175

PSMN020-150W Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance

PSMN020-150W Typical Application

• d.c. to d.c. converters
• switched mode power supplies

The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package.

PSMN020-150W Connection Diagram

PSMN025-100D General Description

SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.

PSMN025-100D Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DSS	Drain-source voltage	T_j = 25 to 175	-	100	V
V_DGR	Drain-gate voltage	T_j= 25 to 175; R_GS= 20 k	-	100	V
V_GS	Gate-source voltage		-	± 20	V
I_D	Continuous drain current	T_mb = 25 ; V_GS= 10 V	-	47	A
		T_mb= 100; V_GS = 10 V	-	33	A
I_DM	Pulsed drain current	T_mb= 25	-	188	A
P_D	Total power dissipation	T_mb = 25	-	150	W
T_j, T_stg	Operating junction andstorage temperature		-55	175

PSMN025-100D Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance

PSMN025-100D Typical Application

• d.c. to d.c. converters
• switched mode power supplies

The PSMN025-100D is supplied in the SOT428 (Dpak) surface mounting package.

PSMN025-100D Connection Diagram

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