PUMH1, PUMH10, PUMH10.115 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT363 D/C:05+
PUMH1, PUMH10, PUMH10.115 Datasheet download

Part Number: PUMH1
MFG: PHILIPS
Package Cooled: SOT363
D/C: 05+
MFG:PHILIPS Package Cooled:SOT363 D/C:05+
PUMH1, PUMH10, PUMH10.115 Datasheet download

MFG: PHILIPS
Package Cooled: SOT363
D/C: 05+
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PDF/DataSheet Download
Datasheet: PUMH1
File Size: 57789 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PUMH10
File Size: 55957 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PUMA2E1000-10
File Size: 475028 KB
Manufacturer:
Download : Click here to Download
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
50 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
50 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
10 |
V |
| Vi | input voltage positive negative |
- |
+40 |
V | |
| IC | collector current (DC) |
- |
100 |
mA | |
| ICM | peak collector current |
- |
100 |
mA | |
| Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C; note 1 note 1 notes 1 and 2 |
- - |
200 200 |
mW mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
150 |
°C | |
| Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
| Per device | |||||
| Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C; note 1 note 1 notes 1 and 2 |
- - |
300 300 |
mW mW |

|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| Per transistor | |||||
| VCBO | collector-base voltage |
open emitter |
- |
50 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
50 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
10 |
V |
| Vi | input voltage positive negative |
- - |
+12 -5 |
V V | |
| IO | output current (DC) |
- |
100 |
mA | |
| ICM | peak collector current |
- |
100 |
mA | |
| Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C note 1 notes 1 and 2 |
- - |
200 200 |
mW mW |
| Tstg | storage temperature |
-65 |
+150 |
°C | |
| Tj | junction temperature |
- |
150 |
°C | |
| Tamb | operating ambient temperature |
-65 |
+150 |
°C | |
| Per device | |||||
| Ptot | total power dissipation SOT363 SOT666 |
Tamb 25 °C note 1 notes 1 and 2 |
- - |
300 300 |
mW mW |

