RF210-61, RF2108, RF2108TR13 Selling Leads, Datasheet
MFG:RFM Package Cooled:TSOP20 D/C:09+
RF210-61, RF2108, RF2108TR13 Datasheet download

Part Number: RF210-61
MFG: RFM
Package Cooled: TSOP20
D/C: 09+
MFG:RFM Package Cooled:TSOP20 D/C:09+
RF210-61, RF2108, RF2108TR13 Datasheet download

MFG: RFM
Package Cooled: TSOP20
D/C: 09+
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PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2108
File Size: 150074 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
The RF2108 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics.
| Parameter | Rating | Unit |
| Supply Voltage (No RF) | -0.5 to +8.0 | VDC |
| Supply Voltage (POUT<31dBm) | -0.5 to +6.0 | VDC |
| Power Control Voltage (VPC) | -0.5 to +6.0 or VCC | V |
| DC Supply Current | 800 | mA |
| Input RF Power | +12 | dBm |
| Output Load VSWR | 10:1 | |
| Storage Temperature | -40 to +150 | °C |
| Junction Temperature | 200 | °C |
