RF2103P, RF2104, RF210-51 Selling Leads, Datasheet
MFG:RFMD Package Cooled:SOP14 D/C:07+
RF2103P, RF2104, RF210-51 Datasheet download

Part Number: RF2103P
MFG: RFMD
Package Cooled: SOP14
D/C: 07+
MFG:RFMD Package Cooled:SOP14 D/C:07+
RF2103P, RF2104, RF210-51 Datasheet download

MFG: RFMD
Package Cooled: SOP14
D/C: 07+
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PDF/DataSheet Download
Datasheet: RF2103P
File Size: 196470 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2104
File Size: 115325 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
The RF2103P is a medium power linear amplifier IC. Thedevice is manufactured on an advanced Gallium ArsenideHeterojunction Bipolar Transistor (HBT) process, and haseen designed for use as the final linear RF amplifier inUHF radio transmitters operating between 450MHz and1000MHz. It may also be used as a driver amplifier inhigher power applications. The device is self-containedwith the exception of the output matching network, powersupply feed line, and bypass capacitors, and it producesan output power level of 750mW (CW). The device canbe used in 3 cell battery applications. The maximum CWoutput at 3.6V is 175mW. The unit has a total gain of 1dB, depending upon the output matching network.
|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +7.5 |
VDC |
| Gain Control Voltage(VPD) |
-0.5 to +5 |
V |
| DC Supply Current |
350 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load VSWR |
10:1 |
|
| Operating Case Temperature |
-40 to +100 |
|
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
The RF2104 is a medium power amplifier IC. The deviceis manufactured on a low cost Silicon process, and hasbeen designed for use as the final RF amplifier in UHFradio transmitters operating between 400MHz and1000MHz. It may also be used as a driver amplifier inhigher power applications. The device is packaged in aplastic quad-batwing 16-lead package, and is self-containedwith the exception of the output matching network,power supply feed line, and bypass capacitors. It producesan output power level of up to 500mW (CW) at3.6V. The device can be used in 3 cell battery applications.The maximum CW output at 3.6V is +27dBm. Theunit has a total gain of 26dB, depending upon the output atching network.
|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +6.0 |
VDC |
| Gain Control Voltage(VPD) |
-0.5 to 3.0 |
V |
| DC Supply Current |
500 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load VSWR |
20:1 |
|
| Operating Ambient Temperature | <div al |
