RF2104RFMD, RF2104TR3, RF2105L Selling Leads, Datasheet
MFG:RF Package Cooled:SOP D/C:04+
RF2104RFMD, RF2104TR3, RF2105L Datasheet download
Part Number: RF2104RFMD
MFG: RF
Package Cooled: SOP
D/C: 04+
MFG:RF Package Cooled:SOP D/C:04+
RF2104RFMD, RF2104TR3, RF2105L Datasheet download
MFG: RF
Package Cooled: SOP
D/C: 04+
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PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2105L
File Size: 71961 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. It is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line.
Parameter |
Rating |
Unit |
Supply Voltage(VCC) |
-0.5 to +6.0 |
VDC |
Control Voltage(VPD) |
-0.5 to +3.0 |
VDC |
DC Supply Current |
700 |
mA |
Input RF Power |
+12 |
dBm |
Output Load |
20:1 |
|
Operating Case Temperature |
-40 to +100 |
|
Operating Ambient Temperature |
-40 to +85 |
|
Storage Temperature |
-40 to +150 |