RF2114, RF211-4/14, RF2117 Selling Leads, Datasheet
MFG:RFMD Package Cooled:SMD D/C:07+
RF2114, RF211-4/14, RF2117 Datasheet download
Part Number: RF2114
MFG: RFMD
Package Cooled: SMD
D/C: 07+
RF2114, RF211-4/14, RF2117
- Table of contents:
Info of RF2114
Info of RF211-4/14
Info of RF2117
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About RF2114
PDF/DataSheet Download
Datasheet: RF2114
File Size: 75122 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
About RF2
PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
About RF2117
PDF/DataSheet Download
Datasheet: RF2117
File Size: 178073 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
RF2114 General Description
The RF2114 is a medium to high power linear amplifierIC. The device is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) process,and has been designed for use as the final linearRF amplifier in UHF radio transmitters operating between1MHz and 600MHz. It may also be used as a driveramplifier in higher power applications. The device is selfcontainedwith the exception of the output matching network,power supply feed line, and bypass capacitors. Thedevice can be used in 3-cell battery applications. Themaximum CW output at 3V is 125mW. The unit has atotal gain of 35dB, depending upon the output matching etwork.
RF2114 Maximum Ratings
|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +8.5 |
VDC |
| Gain Control Voltage(VPD) |
-0.5 to +5.0 |
V |
| DC Supply Current |
3500 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load VSWR |
20:1 |
|
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
RF2114 Features
• 1MHz to 600MHz Operation
• Over 800mW CW Output Power
• 35dB Small Signal Gain
• Single 2.7V to 6.5V Supply
• 45% Efficiency
• Digitally Controlled Power Down Mode
• Over 800mW CW Output Power
• 35dB Small Signal Gain
• Single 2.7V to 6.5V Supply
• 45% Efficiency
• Digitally Controlled Power Down Mode
RF2114 Typical Application
• Digital Communication Systems
• Spread-Spectrum Communication Systems
• Driver for Higher Power Linear Applications
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• Base Station Equipment
• Spread-Spectrum Communication Systems
• Driver for Higher Power Linear Applications
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• Base Station Equipment
RF2117 General Description
The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM applications operating at 433MHz. The device is packaged in a low cost 16-lead plastic package with a met al backside. The device is self-contained with the exception of the output matching network and power supply feed line.
RF2117 Maximum Ratings
|
Parameter |
Rating |
Unit |
| Supply Voltage(VCC) |
-0.5 to +6.0 |
VDC |
| Control Voltage(VPD) |
-0.5 to +3.0 |
V |
| DC Supply Current |
1300 |
mA |
| Input RF Power |
+10 |
dBm |
| Output Load |
7:1 |
|
| Operating Case Temperature |
-40 to +100 |
|
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-55 to +150 |
RF2117 Features
• Single 3V to 5.5V Supply
• Up to 2W CW Output Power
• 33dB Small Signal Gain
• >50% Efficiency
• 400MHz to 500MHz Operation
• Up to 2W CW Output Power
• 33dB Small Signal Gain
• >50% Efficiency
• 400MHz to 500MHz Operation
RF2117 Typical Application
• 3.6V Analog Handsets
• Analog Communication Systems
• 400MHz Industrial Radios
• Portable Battery Powered Equipment
• Analog Communication Systems
• 400MHz Industrial Radios
• Portable Battery Powered Equipment
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