RF2125, RF2125P, RF2125TR7 Selling Leads, Datasheet
MFG:RFMD Package Cooled:n/a D/C:05+
RF2125, RF2125P, RF2125TR7 Datasheet download

Part Number: RF2125
MFG: RFMD
Package Cooled: n/a
D/C: 05+
MFG:RFMD Package Cooled:n/a D/C:05+
RF2125, RF2125P, RF2125TR7 Datasheet download

MFG: RFMD
Package Cooled: n/a
D/C: 05+
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PDF/DataSheet Download
Datasheet: RF2125PPCBA
File Size: 52753 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2125PPCBA
File Size: 52753 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
The RF2125P is a high power, high efficiency linear amplifierIC.Thedeviceismanufacturedonanadvanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base sta-tions requiring linear amplification operating between 1500MHz and 2200MHz. It will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead plas-tic package with a backside ground. The device is self-contained with the exception of the output matching net-work and power supply feed line. It produces a typical output power level of 1W.
| Parameter |
Rating |
Unit |
| Supply Voltage (VCC) |
-0.5 to +7.5 |
VDC |
| Power Control Voltage (VPC) |
-0.5to+5V |
V |
| DC Supply Current |
450 |
mA |
| Input RF Power |
+20 |
dBm |
| Output Load VSWR |
20:1 |
|
| Operating Ambient Temperature |
-40 to +85 |
°C |
| Storage Temperature |
-40 to +100 |
°C |
