RF2132RFMD, RF2132TR13, RF2137 Selling Leads, Datasheet
MFG:1107 Package Cooled:SOP D/C:09+
RF2132RFMD, RF2132TR13, RF2137 Datasheet download

Part Number: RF2132RFMD
MFG: 1107
Package Cooled: SOP
D/C: 09+
MFG:1107 Package Cooled:SOP D/C:09+
RF2132RFMD, RF2132TR13, RF2137 Datasheet download

MFG: 1107
Package Cooled: SOP
D/C: 09+
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PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2137PCBA
File Size: 56289 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
The RF2137 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics at all recommended supply voltages.
| Parameter |
Rating |
Unit |
| Supply Voltage (No RF) |
-0.5 to +8.0 |
VDC |
| Supply Voltage (POUT<31dBm) |
-0.5 to +6.0 |
VDC |
| Power Control Voltage (VPC) |
-0.5 to +6.0 or VCC |
V |
| DC Supply Current |
800 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load VSWR |
10:1 |
|
| Ambient Operating Temperature |
-30 to +90 |
°C |
| Storage Temperature |
-40 to +150 |
°C |

