RF2174TR7, RF2175, RF2189 Selling Leads, Datasheet
MFG:RF Package Cooled:QFN D/C:00+
RF2174TR7, RF2175, RF2189 Datasheet download
Part Number: RF2174TR7
MFG: RF
Package Cooled: QFN
D/C: 00+
RF2174TR7, RF2175, RF2189
- Table of contents:
Info of RF2174TR7
Info of RF2175
Info of RF2189
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About RF2
PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
About RF2175
PDF/DataSheet Download
Datasheet: RF2175
File Size: 119239 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
About RF2189
PDF/DataSheet Download
Datasheet: RF2189
File Size: 112377 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
RF2175 General Description
The RF2175 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in TETRA hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 380MHz to 512MHz band. The RF2175 has an analog bias control voltage to maximize efficiency. The device is self-contained with 50 input, and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a small SSOP-16 plastic with backside ground.
RF2175 Maximum Ratings
|
Parameter |
Rating |
Unit |
| Supply Voltage(RF off) |
+8.0 |
VDC |
| Supply Voltage (RF Applied) |
+4.5 |
VDC |
| Mode Voltage (VMODE) |
+5.0 |
VDC |
| Control Voltage (VREG) |
+5.0 |
VDC |
| Input RF Power (Avg.) |
+5 |
dBm |
| Output VSWR - Inband |
6:1 |
|
| Output VSWR - Out of Band |
20:1 |
|
| Operating Ambient Temperature |
-30 to +110 |
|
| Storage Temperature |
-30 to +120 |
|
| Moisture Sensitivity | JEDEC Level 5 * |
RF2175 Features
• Single 3V Supply
• 31.8dBm Linear Output Power
• 37.5dB Linear Gain
• 30% Linear Efficiency
• On-Board Power Down Mode
• 380MHz to 512MHz Operation
• 31.8dBm Linear Output Power
• 37.5dB Linear Gain
• 30% Linear Efficiency
• On-Board Power Down Mode
• 380MHz to 512MHz Operation
RF2175 Typical Application
• 3V TETRA Cellular Handsets
• 3V CDMA Cellular Handsets
• Portable Battery-Powered Equipment
• 3V CDMA Cellular Handsets
• Portable Battery-Powered Equipment
RF2189 General Description
The RF2189 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.
RF2189 Maximum Ratings
|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +6.0 |
VDC |
| Control Voltage(VPC) |
-0.5 to +3.3 |
V |
| DC Supply Current |
350 |
mA |
| Input RF Power |
+12 |
dBm |
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
|
| Moisture sensitivity | JEDEC Level 3 |
RF2189 Features
• Single 3.3V Power Supply
• +25dBm Saturated Output Power
• 20dB Small Signal Gain
• High Power Added Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Frequency Range
• +25dBm Saturated Output Power
• 20dB Small Signal Gain
• High Power Added Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Frequency Range
RF2189 Typical Application
• 2.5GHz ISM Band Applications
• PCS Communication Systems
• Wireless LAN Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems
• PCS Communication Systems
• Wireless LAN Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems
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