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RF2308, RF2310, RF2311

Table of contents:
Info of RF2308
Info of RF2310
Info of RF2311

RF2308, RF2310, RF2311 Selling Leads, Datasheet

MFG:RFMD Package Cooled:SMD D/C:N/A

RF2308, RF2310, RF2311 Datasheet download

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Part Number: RF2308

MFG: RFMD

Package Cooled: SMD

D/C: N/A

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RF2308 General Description

The RF2308 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 4000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified.

RF2308 Maximum Ratings

Parameter	Rating	Unit
Supply Current Input RF Power Operating Ambient Temperature Storage Temperature	65 +10 -40 to +85 -40 to +150	mA dBm °C °C

RF2308 Features

• DC to 4000MHz Operation
• Internally matched Input and Output
• 12dB Small Signal Gain
• 5dB Noise Figure
• 20mW Linear Output Power
• Single Positive Power Supply

RF2308 Typical Application

• General Purpose Broadband Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment

RF2308 Connection Diagram

RF2310 General Description

The RF2310 is a general purpose, low-cost, high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Tran-sistor (HBT) process, and has been designed for use as an easily cascadable 50? gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. The gain flatness over a very wide band-width makes the device suitable for many applications.The device is self-contained with 50? input and output impedances and requires only two external DC biasing elements to operate as specified.

RF2310 Maximum Ratings

Parameter	Rating	Unit
Supply Voltage Input RF Power Storage Temperature Junction Temperature Thermal Resistance, Junction to Case	-0.5 to +6.0 +10 -40 to +150 175 179	V_DCdBm °C °C °C/W

RF2310 Features

DC to well over 2500MHz Operation
Internally Matched Input and Output
15dB Small Signal Gain
5dB Noise Figure
+19dBm Output Power
Single 3.5V to 6V Positive Power Supply

RF2310 Typical Application

General Purpose High Bandwidth Gain Blocks
IF or RF Buffer Amplifiers
Broadband Test Equipment
Final PA for Medium Power Applications
Driver Stage for Power Amplifiers

RF2310 Connection Diagram

RF2311 General Description

The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 1600MHz. The gain flatness and high bandwidth make the device suitable for many other applications as well. The device is self-contained with 50Ω input and output impedances, and no external DC biasing elements are required to operate as specified.

RF2311 Maximum Ratings

Parameter	Rating	Unit
Supply Current Input RF Power Operating Ambient Temperature Storage Temperature	-0.5 to +6 +10 -40 to +85 -40 to +150	V_DC dBm °C °C

RF2311 Features

• DC to well over 1600MHz Operation
• Internally Matched Input and Output
• 14dB Small Signal Gain
• 4.2dB Noise Figure
• +9dBm Output Power
• Single 2.7V to 6V Positive Power Supply

RF2311 Typical Application

• General Purpose High Bandwidth Gain Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers

RF2311 Connection Diagram

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