MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO247-2 D/C:TO
RHRG50100, RHRG50120, RHRG5060 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO247-2
D/C: TO
Description: DIODE HYPER 600V 50A TO-247
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PDF/DataSheet Download
Datasheet: RHRG50100
File Size: 39727 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRG50120
File Size: 14865 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRG5060
File Size: 49592 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
The RHRG50100 is a hyperfast diode with soft recovery characteristics (trr < 75ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly developmental type TA49066.
|
RHRG50100 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
1000 |
V |
| Working Peak Reverse Voltage |
VRWM |
1000 |
V |
| DC Blocking Voltage |
VR |
1000 |
V |
| Average Rectified Forward Current (TC = 60) |
IF(AV) |
50 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
100 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
500 |
A |
| Maximum Power Dissipation |
PD |
150 |
W |
| Avalanche Energy (See Figures 10 and 11). |
EAVL |
40 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
|
The RHRG50120 is a hyperfast diode with soft recovery characteristics (trr < 85ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly developmental type TA49100.
|
RHRG50120 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
| Working Peak Reverse Voltage |
VRWM |
1200 |
V |
| DC Blocking Voltage |
VR |
1200 |
V |
| Average Rectified Forward Current (TC = 50) |
IF(AV) |
50 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
100 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
500 |
A |
| Maximum Power Dissipation |
PD |
150 |
W |
| Avalanche Energy (See Figures 10 and 11). |
EAVL |
50 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
|
| Technical/Catalog Information | RHRG5060 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 50A |
| Voltage - Forward (Vf) (Max) @ If | 2.1V @ 50A |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 250A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-247 |
| Packaging | Tube |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RHRG5060 RHRG5060 |
The RHRG5060 is a hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly developmental type TA49065.
|
RHRG5060 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
600 |
V |
| DC Blocking Voltage |
VR |
600 |
V |
| Average Rectified Forward Current (TC = +93) |
IF(AV) |
50 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
100 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
500 |
A |
| Maximum Power Dissipation |
PD |
150 |
W |
|
Avalanche Energy |
EAVL |
40 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
|
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