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RHRP650CC, RHRP660CC, RHRP8100

Table of contents:
Info of RHRP650CC
Info of RHRP660CC
Info of RHRP8100

RHRP650CC, RHRP660CC, RHRP8100 Selling Leads, Datasheet

MFG:Intersil Package Cooled:TO-220 D/C:08+

RHRP650CC, RHRP660CC, RHRP8100 Datasheet download

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Part Number: RHRP650CC

MFG: Intersil

Package Cooled: TO-220

D/C: 08+

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RHRP650CC General Description

RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics (trr < 30ns).They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted hepaticas planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Formerly developmental type TA49057.

RHRP650CC Maximum Ratings

		RHRP640CC	RHRP650CC	RHRP660CC	UNITS
Peak Repetitive Reverse Voltage	V_RRM	400	500	600	V
Working Peak Reverse Voltage	V_RWM	400	500	600	V
DC Blocking Voltage	V_R	400	500	600	V
Average Rectified Forward Current (TC = 152)	I_F(AV)	6	6	6	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FRM	12	12	12	A
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60Hz)	I_FSM	60	60	60	A
Maximum Power Dissipation	P_D	50	50	50	W
Avalanche Energy (See Figures 10 and 11)	E_AVL	10	10	10	mJ
Operating and Storage Temperature	T_STG,T_J	-65to175	-65to175	-65to175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s	T_L	300	300	300
Package Body for 10s, see Tech Brief 334	T_pkg	260	260	260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

RHRP650CC Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

RHRP650CC Typical Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose

RHRP660CC General Description

RHRP660CC Maximum Ratings

		RHRP640CC	RHRP650CC	RHRP660CC	UNITS
Peak Repetitive Reverse Voltage	V_RRM	400	500	600	V
Working Peak Reverse Voltage	V_RWM	400	500	600	V
DC Blocking Voltage	V_R	400	500	600	V
Average Rectified Forward Current (TC = 152)	I_F(AV)	6	6	6	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FRM	12	12	12	A
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60Hz)	I_FSM	60	60	60	A
Maximum Power Dissipation	P_D	50	50	50	W
Avalanche Energy (See Figures 10 and 11)	E_AVL	10	10	10	mJ
Operating and Storage Temperature	T_STG,T_J	-65to175	-65to175	-65to175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s	T_L	300	300	300
Package Body for 10s, see Tech Brief 334	T_pkg	260	260	260

RHRP660CC Features

RHRP660CC Typical Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose

RHRP8100 General Description

The RHRP8100 is a hyperfast diode with soft recovery characteristic (trr < 60ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.

Formerly developmental type TA49060.

RHRP8100 Maximum Ratings

		RHRP8100	UNITS
Peak Repetitive Reverse Voltage	V_RRM	1000	V
Working Peak Reverse Voltage	V_RWM	1000	V
DC Blocking Voltage	V_R	1000	V
Average Rectified Forward Current (TC = 140)	I_F(AV)	8	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FRM	16	A
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz)	I_FSM	100	A
Maximum Power Dissipation	P_D	75	W
Avalanche Energy (See Figures 10 and 11).	E_AVL	20	mj
Operating and Storage Temperature	T_STG,T_J	-65to+175

RHRP8100 Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction

RHRP8100 Typical Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose

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