MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:08+
RHRP840, RHRP840CC, RHRP860 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 08+
Description: DIODE HYPER 600V 8A TO-220AC
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PDF/DataSheet Download
Datasheet: RHRP840
File Size: 51184 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRP840CC
File Size: 51162 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRP860
File Size: 51184 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly developmental type TA49059.
|
RHRP840 |
RHRP860 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
400 |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
400 |
600 |
V |
| DC Blocking Voltage |
VR |
400 |
600 |
V |
| Average Rectified Forward Current (TC = 150) |
IF(AV) |
8 |
8 |
A |
|
Repetitive Peak Surge Current |
IFRM |
16 |
16 |
A |
|
Nonrepetitive Peak Surge Current |
IFSM |
100 |
100 |
A |
| Maximum Power Dissipation |
PD |
75 |
75 |
W |
| Avalanche Energy (See Figures 10 and 11) |
EAVL |
20 |
20 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
-65to175 |
|
The RHRP840CC and RHRP860CC are hyperfast dual diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly development type TA49059.
|
RHRP840CC |
RHRP860CC |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
400 |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
400 |
600 |
V |
| DC Blocking Voltage |
VR |
400 |
600 |
V |
| Average Rectified Forward Current (TC = 150) |
IF(AV) |
8 |
8 |
A |
|
Repetitive Peak Surge Current |
IFRM |
16 |
16 |
A |
|
Nonrepetitive Peak Surge Current |
IFSM |
100 |
100 |
A |
| Maximum Power Dissipation |
PD |
75 |
75 |
W |
| Avalanche Energy (See Figures 10 and 11) |
EAVL |
20 |
20 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
-65to175 |
|
| Technical/Catalog Information | RHRP860 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 2.1V @ 8A |
| Reverse Recovery Time (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 100A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220AC |
| Packaging | Tube |
| Capacitance @ Vr, F | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RHRP860 RHRP860 |
The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly developmental type TA49059.
|
RHRP840 |
RHRP860 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
400 |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
400 |
600 |
V |
| DC Blocking Voltage |
VR |
400 |
600 |
V |
| Average Rectified Forward Current (TC = 150) |
IF(AV) |
8 |
8 |
A |
|
Repetitive Peak Surge Current |
IFRM |
16 |
16 |
A |
|
Nonrepetitive Peak Surge Current |
IFSM |
100 |
100 |
A |
| Maximum Power Dissipation |
PD |
75 |
75 |
W |
| Avalanche Energy (See Figures 10 and 11) |
EAVL |
20 |
20 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to175 |
-65to175 |
|
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