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RHRU10060, RHRU150100, RHRU150120

Table of contents:
Info of RHRU10060
Info of RHRU150100
Info of RHRU150120

RHRU10060, RHRU150100, RHRU150120 Selling Leads, Datasheet

MFG:Intersil Package Cooled:7850 D/C:02+

RHRU10060, RHRU150100, RHRU150120 Picture

RHRU10060, RHRU150100, RHRU150120 Datasheet download

Five Points

Part Number: RHRU10060

MFG: Intersil

Package Cooled: 7850

D/C: 02+

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RHRU10060 General Description

The RHRU10060 is a hyperfast diode with soft recovery characteristics (t_rr < 50ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.

Formerly developmental type TA49069.

RHRU10060 Maximum Ratings

		RHRU10060	UNITS
Peak Repetitive Reverse Voltage	V_RRM	600	V
Working Peak Reverse Voltage	V_RWM	600	V
DC Blocking Voltage	V_R	600	V
Average Rectified Forward Current (T_C = 60)	I_F(AV)	100	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FRM	200	A
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz)	I_FSM	1000	A
Maximum Power Dissipation	P_D	210	W
Avalanche Energy (See Figures 7 and 8)	E_AVL	50	mJ
Operating and Storage Temperature	T_STG,T_J	-65to+175

RHRU10060 Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . < 50ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction

RHRU10060 Typical Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose

RHRU150100 General Description

RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (t_RR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.

RHRU150100 Maximum Ratings

		RHRU15090	RHRU150100	UNITS
Peak Repetitive Reverse Voltage	V_RRM	900	1000	V
Working Peak Reverse Voltage	V_RWM	900	1000	V
DC Blocking Voltage	V_R	900	1000	V
Average Rectified Forward Current (T_C = +42)	I_F(AV)	150	150	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FRM	300	300	A
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz)	I_FSM	1500	1500	A
Maximum Power Dissipation	P_D	375	375	W
Avalanche Energy(L = 40mH)	E_AVL	50	50	mJ
Operating and Storage Temperature	T_STG,T_J	-65to+175	-65to175

RHRU150100 Features

• Hyperfast with Soft Recovery<90ns
• Operating Temperature+175
• Reverse Voltage Up To1000V
• Avalanche Energy Rated
• Planar Construction

RHRU150100 Typical Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose

RHRU150120 General Description

The RHRU150120 is a hyperfast diode with soft recovery characteristics (t_rr< 100ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.

Formerly developmental type TA49074.

RHRU150120 Maximum Ratings

		RHRU150120	UNITS
Peak Repetitive Reverse Voltage	V_RRM	1200	V
Working Peak Reverse Voltage	V_RWM	1200	V
DC Blocking Voltage	V_R	1200	V
Average Rectified Forward Current (T_C = 37.5)	I_F(AV)	150	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FRM	300	A
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz)	I_FSM	1500	A
Maximum Power Dissipation	P_D	375	W
Avalanche Energy (See Figures10and 11)	E_AVL	50	mJ
Operating and Storage Temperature	T_STG,T_J	-65to+175

RHRU150120 Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . <100ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction

RHRU150120 Typical Application

• Switching Power Supplier
• Power Switching Circuits
• General Purpose

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