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The RHRU10060 is a hyperfast diode with soft recovery characteristics (trr < 50ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly developmental type TA49069.
| RHRU10060 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
600 |
V |
| DC Blocking Voltage |
VR |
600 |
V |
| Average Rectified Forward Current (TC = 60℃) |
IF(AV) |
100 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
200 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
1000 |
A |
| Maximum Power Dissipation |
PD |
210 |
W |
|
Avalanche Energy (See Figures 7 and 8) |
EAVL |
50 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
℃ |
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . < 50ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175℃
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
| RHRU15090 |
RHRU150100 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
900 |
1000 |
V |
| Working Peak Reverse Voltage |
VRWM |
900 |
1000 |
V |
| DC Blocking Voltage |
VR |
900 |
1000 |
V |
| Average Rectified Forward Current (TC = +42℃) |
IF(AV) |
150 |
150 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
300 |
300 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
1500 |
1500 |
A |
| Maximum Power Dissipation |
PD |
375 |
375 |
W |
|
Avalanche Energy(L = 40mH) |
EAVL |
50 |
50 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
-65to175 |
℃ |
• Hyperfast with Soft Recovery<90ns
• Operating Temperature+175℃
• Reverse Voltage Up To1000V
• Avalanche Energy Rated
• Planar Construction
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
The RHRU150120 is a hyperfast diode with soft recovery characteristics (trr < 100ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly developmental type TA49074.
| RHRU150120 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
| Working Peak Reverse Voltage |
VRWM |
1200 |
V |
| DC Blocking Voltage |
VR |
1200 |
V |
| Average Rectified Forward Current (TC = 37.5℃) |
IF(AV) |
150 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
300 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
1500 |
A |
| Maximum Power Dissipation |
PD |
375 |
W |
|
Avalanche Energy (See Figures10and 11) |
EAVL |
50 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
℃ |
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . <100ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175℃
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
• Switching Power Supplier
• Power Switching Circuits
• General Purpose