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RHRU75100, RHRU7560, RHRU8060

Table of contents:
Info of RHRU75100
Info of RHRU7560
Info of RHRU8060

RHRU75100, RHRU7560, RHRU8060 Selling Leads, Datasheet

MFG:Intersil Package Cooled:7850 D/C:08+/09+

RHRU75100, RHRU7560, RHRU8060 Datasheet download

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Part Number: RHRU75100

MFG: Intersil

Package Cooled: 7850

D/C: 08+/09+

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RHRU75100 General Description

RHRU7570, RHRU7580, RHRU7590 and RHRU75100 (TA49068) are hyperfast diodes with soft recovery characteristics
(t_RR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted
epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.

RHRU75100 Maximum Ratings

		RHRU7570	RHRU7580	RHRU7590	RHRU75100	UNITS
Peak Repetitive Reverse Voltage	V_RRM	700	800	900	1000	V
Working Peak Reverse Voltage	V_RWM	700	800	900	1000	V
DC Blocking Voltage	V_R	700	800	900	1000	V
Average Rectified Forward Current (TC = +52)	I_F(AV)	75	75	75	75	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FSM	150	150	150	150	A
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz)	I_FSM	750	750	750	750	A
Maximum Power Dissipation	P_D	190	190	190	190	W
Avalanche Energy (L = 40mH)(See Figures 10 and 11).	E_AVL	50	50	50	50	mj
Operating and Storage Temperature	T_STG,T_J	-65to+175	-65to+175	-65to+175	-65to+175

RHRU75100 Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction

RHRU75100 Typical Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose

RHRU7560 General Description

RHRU7540, RHRU7550 and RHRU7560 (TA49067) are hyperfast diodes with soft recovery characteristics (t_RR < 55ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.

RHRU7560 Maximum Ratings

		RHRU7540	RHRU7550	RHRU7560	UNITS
Peak Repetitive Reverse Voltage	V_RRM	400	500	600	V
Working Peak Reverse Voltage	V_RWM	400	500	600	V
DC Blocking Voltage	V_R	400	500	600	V
Average Rectified Forward Current (TC = +80)	I_F(AV)	75	75	75	A
Repetitive Peak Surge Current (Square Wave, 20kHz)	I_FSM	150	150	150	A
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz)	I_FSM	750	750	750	A
Maximum Power Dissipation	P_D	190	190	190	W
Avalanche Energy (See Figures 10 and 11).	E_AVL	50	50	50	mj
Operating and Storage Temperature	T_STG,T_J	-65to+175	-65to+175	-65to+175

RHRU7560 Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction

RHRU7560 Typical Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose

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