RHRU7590, RHU002N06, RHU002N06/KP Selling Leads, Datasheet
MFG:Intersil Package Cooled:7850 D/C:02+
RHRU7590, RHU002N06, RHU002N06/KP Datasheet download
Part Number: RHRU7590
MFG: Intersil
Package Cooled: 7850
D/C: 02+
MFG:Intersil Package Cooled:7850 D/C:02+
RHRU7590, RHU002N06, RHU002N06/KP Datasheet download
MFG: Intersil
Package Cooled: 7850
D/C: 02+
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PDF/DataSheet Download
Datasheet: RHRU7590
File Size: 62234 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHU002N06
File Size: 64417 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHU002N06
File Size: 64417 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
RHRU7570, RHRU7580, RHRU7590 and RHRU75100 (TA49068) are hyperfast diodes with soft recovery characteristics
(tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted
epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
RHRU7570 |
RHRU7580 |
RHRU7590 |
RHRU75100 |
UNITS | ||
Peak Repetitive Reverse Voltage |
VRRM |
700 |
800 |
900 |
1000 |
V |
Working Peak Reverse Voltage |
VRWM |
700 |
800 |
900 |
1000 |
V |
DC Blocking Voltage |
VR |
700 |
800 |
900 |
1000 |
V |
Average Rectified Forward Current (TC = +52) |
IF(AV) |
75 |
75 |
75 |
75 |
A |
Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFSM |
150 |
150 |
150 |
150 |
A |
Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
750 |
750 |
750 |
750 |
A |
Maximum Power Dissipation |
PD |
190 |
190 |
190 |
190 |
W |
Avalanche Energy (L = 40mH)(See Figures 10 and 11). |
EAVL |
50 |
50 |
50 |
50 |
mj |
Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
-65to+175 |
-65to+175 |
-65to+175 |
Parameter |
Symbol |
Limits |
Unit | |
Drain-source voltage |
VDSS |
60 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current | Continuous |
ID |
200 |
mA |
Pulsed |
IDP*1 |
800 |
mA | |
Source current | Continuous |
IS |
200 |
mA |
Pulsed |
ISP*1 |
800 |
mA | |
Total power dissipation |
PD*2 |
200 |
mW | |
Channel temperature |
Tch |
150 |
||
Storage temperature |
Tstg |
-55to+150 |