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RN1504, RN1506, RN1507

Table of contents:
Info of RN1504
Info of RN1506
Info of RN1507

RN1504, RN1506, RN1507 Selling Leads, Datasheet

MFG:Toshiba Package Cooled:Sot-153 D/C:09+

RN1504, RN1506, RN1507 Datasheet download

Five Points

Part Number: RN1504

MFG: Toshiba

Package Cooled: Sot-153

D/C: 09+

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RN1504 Maximum Ratings

Characteristic		Symbol	Rating	Unit
Collector-base voltage	RN1501~1506	V_CBO	50	V
Collector-emitter voltage	RN1501~1506	V_CEO	50	V
Emitter-base voltage	RN1501~1504	V_EBO	10	V
Emitter-base voltage	RN1505,1506	V_EBO	5	V
Collector current	RN1501~1506	I_C	100	mA
Collector power dissipation		P_C*	300	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	−55~150

* Total rating

RN1504 Typical Application

·Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·Complementary to RN2501~RN2506

RN1506 Maximum Ratings

Characteristic		Symbol	Rating	Unit
Collector-base voltage	RN1501~1506	V_CBO	50	V
Collector-emitter voltage	RN1501~1506	V_CEO	50	V
Emitter-base voltage	RN1501~1504	V_EBO	10	V
Emitter-base voltage	RN1505,1506	V_EBO	5	V
Collector current	RN1501~1506	I_C	100	mA
Collector power dissipation		P_C*	300	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	−55~150

* Total rating

RN1506 Typical Application

RN1507 General Description

The RN1507 is a kind of transistor. It is a silicon NPN epitaxial type (PCT process). It is intended for switching, inverter circuit, interface circuit and driver circuit applications. There are some features as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)complementary to RN2312, RN2313; (5)including two devices in SMV (super mini type with 5 leads).

What comes next is about the maximum ratings (Ta=25): (1)collector-base voltage, VCBO: 50 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 100 mA; (5)collector power dissipation, PC: 300 mW; (6)junction temperature, Tj: 150; (7)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics (Ta=25): (1)collector cut-off current, ICBO: 100 nA at VCB=50 V, IE=0; ; (2)collector cut-off current, ICEO: 0.081 mA and 0.15 mA typ and 0.15 mA at VCB=50 V, IE=0; (3)emitter cut-off current, IEBO: 500 nA at VEB=5 V, IB=0; (4)DC current gain, hFE: 80 min at VCE=5 V, IC=10 mA; (5)collector-emitter saturation voltage, VCE(sat): 0.1 V typ and 0.3 V max at IC=5 mA, IB=0.25 mA; (6)transition frequency, fT: 250 MHz typ at VCE=10 V, IC=5 mA; (7)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=10 V, IE=0, f=1 MHz; (8)input resistor, R1: 7k min, 10k typ and 13k max.

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