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SB1080DC-T3, SB108V04, SB10H150CT-1

SB1080DC-T3, SB108V04, SB10H150CT-1 Selling Leads, Datasheet

MFG:S  Package Cooled:TO-  D/C:05/06

SB1080DC-T3, SB108V04, SB10H150CT-1 Picture

SB1080DC-T3, SB108V04, SB10H150CT-1 Datasheet download

Five Points

Part Number: SB1080DC-T3

 

MFG: S

Package Cooled: TO-

D/C: 05/06

 

 

 
 
 
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About SB1080DC-T3

PDF/DataSheet Download

Datasheet: SB1080DC-T3

File Size: 47444 KB

Manufacturer: WTE [Won-Top Electronics]

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About SB100-05H

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Datasheet: SB100-05H

File Size: 87725 KB

Manufacturer: SANYO [Sanyo Semicon Device]

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SB10H150CT-1 Suppliers

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About SB100-05H

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Datasheet: SB100-05H

File Size: 87725 KB

Manufacturer: SANYO [Sanyo Semicon Device]

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SB10H150CT-1 General Description

MBR10H150CT, MBRF10H150CT, SB10H150CT-1 datasheet

SB10H150CT-1 Maximum Ratings

PARAMETER
SYMBOL
MBR10H150CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current(see Fig.1)Total device
per diode
IF(AV)
10
5
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
160
A
Peak repetitive reverse current per diode at tp= 2s,1kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20s waveform)
ERSM
10
mJ
Non-repetitive avalanche energy per diode at 25, IAS=1.5A, L=10mH
EAS
11.25
mJ
Voltage rate of change (rated VR )
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ , TSTG
-65 to +175
Isolation voltage (ITO-220AB only)
From terminals to heatsink t =1minute
VAC
1500
V

SB10H150CT-1 Features

`Guardring for overvoltage protection
`Low power loss, high efficiency
`Low forward voltage drop
`High frequency operation
`Solder dip 260, 40 second
`Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

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