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SBR2A30P1-7, SBR2U30P1, SBR2U30SA

SBR2A30P1-7, SBR2U30P1, SBR2U30SA Selling Leads, Datasheet

MFG:Diodes Inc  Category:Discrete Semiconductor Products  Package Cooled:09+  D/C:09+

SBR2A30P1-7, SBR2U30P1, SBR2U30SA Picture

SBR2A30P1-7, SBR2U30P1, SBR2U30SA Datasheet download

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Part Number: SBR2A30P1-7

Category: Discrete Semiconductor Products

MFG: Diodes Inc

Package Cooled: 09+

D/C: 09+

Description: DIODE SBR 2A 30V POWERDI123

 

 
 
 
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About SBR2A30P1-7

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Datasheet: SBR2A30P1-7

File Size: 313589 KB

Manufacturer: DIODES [Diodes Incorporated]

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About SBR2U30P1-7

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Datasheet: SBR2U30P1-7

File Size: 327056 KB

Manufacturer: DIODES [Diodes Incorporated]

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About SBR0120S3

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Datasheet: SBR0120S3

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Manufacturer: ETC

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SBR2A30P1-7 Parameters

Technical/Catalog InformationSBR2A30P1-7
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max)30V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If450mV @ 2A
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr200A @ 30V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CasePowerDI? 123
PackagingTape & Reel (TR)
Capacitance @ Vr, F-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SBR2A30P1 7
SBR2A30P17

SBR2U30P1 Maximum Ratings

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
30 v
RMS Reverse Voltage VR(RMS) 21 v
Average Rectified Output Current (See Figure 1) IO 2.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM 75 A
Non-Repetitive Avalanche Energy
(TJ = 25°C, IAS = 5A, L = 8.5 mH)
EAS 105 mJ
Repetitive Peak Avalanche Energy
(1s, 25°C)
PARM 1100 W
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
RӨJS
RӨJA
RӨjA
5
178
123
°C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 ºC
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical RӨJS calculated from the top center of the die straight down to the PCB cathode tab solder junction.
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf

SBR2U30P1 Features

• Ultra Low Forward Voltage Drop
• Superior Reverse Avalanche Capability
• Patented Interlocking Clip Design for High Surge Current Capacity
• Patented Super Barrier Rectifier Technology
• Soft, Fast Switching Capability
• 150ºC Operating Junction Temperature
• ±16KV ESD Protection (HBM, 3B)
• ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
• Lead Free Finish, RoHS Compliant (Note 1)
• "Green" Molding Compound (No Br, Sb)
• Qualified to AEC-Q 101 Standards for High Reliability

SBR2U30SA Maximum Ratings

Product Type SBR
Part Number SBR2U30SA
Max Average Rectified Current IO (A) 2
@ Terminal Temperature TT (oC) 50
Peak Repetitive Reverse Voltage VRRM (V) 30
Peak Forward Surge Current IFSM (A) 66
Forward Voltage Drop VF (V) 0.39
@ IF (A) 2
Max Reverse Current IR (mA) 0.5
@ VR (V) 30
Total Capacitance CT (pF) -

SBR2U30SA Connection Diagram

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