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Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM VRM
30
v
RMS Reverse Voltage
VR(RMS)
21
v
Average Rectified Output Current (See Figure 1)
IO
2.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
75
A
Non-Repetitive Avalanche Energy (TJ = 25°C, IAS = 5A, L = 8.5 mH)
EAS
105
mJ
Repetitive Peak Avalanche Energy (1s, 25°C)
PARM
1100
W
Maximum Thermal Resistance Thermal Resistance Junction to Soldering (Note 2) Thermal Resistance Junction to Ambient (Note 3) Thermal Resistance Junction to Ambient (Note 4)
RӨJS RӨJA RӨjA
5 178 123
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
ºC
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7. 2. Theoretical RӨJS calculated from the top center of the die straight down to the PCB cathode tab solder junction. 3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 4. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
SBR2U30P1 Features
• Ultra Low Forward Voltage Drop • Superior Reverse Avalanche Capability • Patented Interlocking Clip Design for High Surge Current Capacity • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • 150ºC Operating Junction Temperature • ±16KV ESD Protection (HBM, 3B) • ±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge) • Lead Free Finish, RoHS Compliant (Note 1) • "Green" Molding Compound (No Br, Sb) • Qualified to AEC-Q 101 Standards for High Reliability