MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP20 D/C:98+
SD287, SD2900, SD2902 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SOP20
D/C: 98+
Description: TRANS RF N-CH HF/VHF/UHF M113
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PDF/DataSheet Download
Datasheet: SD200
File Size: 32986 KB
Manufacturer: CALOGIC [Calogic, LLC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SD2900
File Size: 241217 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SD2902
File Size: 215891 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | SD2900 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 65V |
| Current Rating | 900mA |
| Package / Case | M113 |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SD2900 SD2900 497 5462 ND 4975462ND 497-5462 |
The SD2900 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain Source Voltage | 65 | V |
| VDGR | Drain-Gate Voltage (RGS = 1M) | 65 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current | 900 | mA |
| PDISS | Power Dissipation | 21.9 | W |
| Tj | Max. Operating Junction Temperature | 200 | oC |
| TSTG | Storage Temperature | -65 to 150 | oC |
| Technical/Catalog Information | SD2902 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 65V |
| Current Rating | 2.5A |
| Package / Case | M113 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SD2902 SD2902 497 5463 ND 4975463ND 497-5463 |
The SD2902 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain Source Voltage | 65 | V |
| VDGR | Drain-Gate Voltage (RGS = 1M) | 65 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current | 2.5 | mA |
| PDISS | Power Dissipation | 58.3 | W |
| Tj | Max. Operating Junction Temperature | 200 | |
| TSTG | Storage Temperature | -65 to 150 |
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