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SD2931, SD2931-10, SD2932

Table of contents:
Info of SD2931
Info of SD2931-10
Info of SD2932

SD2931, SD2931-10, SD2932 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products D/C:03+

SD2931, SD2931-10, SD2932 Datasheet download

Five Points

Part Number: SD2931

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled:

D/C: 03+

Description: TRANS RF N-CH HF/VHF/UHF M244

Price Break

Unit Price

58.56000

Extended Price

2928.00

(All prices are in USD) Prices for reference only

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SD2931 Parameters

Technical/Catalog Information	SD2931
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	125V
Current Rating	20A
Package / Case	M244
Packaging	Tray
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD2931 SD2931

SD2931 General Description

The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2931 is intended for use in 50V dc large signal applications up to 230 MHz

SD2931 Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	125	V
V_DGR	Drain-Gate Voltage (R_GS = 1M)	125	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current	16	A
P_DISS	Power Dissipation	292	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to 150

SD2931 Connection Diagram

SD2931-10 Parameters

Technical/Catalog Information	SD2931-10
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	125V
Current Rating	20A
Package / Case	M174
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD2931 10 SD293110 497 5467 ND 4975467ND 497-5467

SD2931-10 General Description

The SD2931-10 is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50V dc large signal applications up to 230 MHz.

The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications.

SD2931-10 Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	125	V
V_DGR	Drain-Gate Voltage (R_GS = 1M)	125	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current	20	A
P_DISS	Power Dissipation	389	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to 150

SD2931-10 Connection Diagram

SD2932 Parameters

Technical/Catalog Information	SD2932
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	125V
Current Rating	40A
Package / Case	M244
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD2932 SD2932 497 5468 ND 4975468ND 497-5468

SD2932 General Description

The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 250 MHz

SD2932 Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	125	V
V_DGR	Drain-Gate Voltage (R_GS = 1M)	125	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current	40	A
P_DISS	Power Dissipation	500	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to 150

SD2932 Connection Diagram

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