MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:09+
SFF9250L, SFF96364ALE, SFF96802E Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: N/A
D/C: 09+
Description: MOSFET P-CHAN 200V 12.6A TO-3P
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Datasheet: SFF9250L
File Size: 559735 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SFF-023
File Size: 107260 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: SFF-023
File Size: 107260 KB
Manufacturer:
Download : Click here to Download
| Technical/Catalog Information | SFF9250L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 12.6A |
| Rds On (Max) @ Id, Vgs | 230 mOhm @ 6.3A, 5V |
| Input Capacitance (Ciss) @ Vds | 3250pF @ 25V |
| Power - Max | 90W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 5V |
| Package / Case | TO-3PF |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SFF9250L SFF9250L |
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-200 |
V |
|
ID |
Continuous Drain Current (TC=25) |
-12.6 |
A |
| Continuous Drain Current (TC=100) |
-7.9 | ||
|
IDM |
Drain Current-Pulsed |
-50.4 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
990 |
mJ |
|
IAR |
Avalanche Current |
-12.6 |
A |
|
EAR |
Repetitive Avalanche Energy |
20.4 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
PD |
Total Power Dissipation (TC=25) Linear Derating Factor |
90 0.72 |
W W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/18" from case for 5-seconds |
300 |
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