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SFW9530TM, SFW9540, SFW9610

Table of contents:
Info of SFW9530TM
Info of SFW9540
Info of SFW9610

SFW9530TM, SFW9540, SFW9610 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:06+

SFW9530TM, SFW9540, SFW9610 Datasheet download

Five Points

Part Number: SFW9530TM

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263

D/C: 06+

Description: MOSFET P-CH 100V 10.5A D2PAK

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SFW9530TM Parameters

Technical/Catalog Information	SFW9530TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10.5A
Rds On (Max) @ Id, Vgs	300 mOhm @ 5.3A, 10V
Input Capacitance (Ciss) @ Vds	1035pF @ 25V
Power - Max	3.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SFW9530TM SFW9530TM

SFW9540 Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	-100	V
I_D	Continuous Drain Current (T_C=25)	-17	A
I_D	Continuous Drain Current (T_C=100)	-12	A
I_DM	Drain Current-Pulsed	-68	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy	578	mJ
I_AR	Avalanche Current	-17	A
E_AR	Repetitive Avalanche Energy	13.2	mJ
dv/dt	Peak Diode Recovery dv/dt	-6.5	V/ns
P_D	Total Power Dissipation (T_A=25)^*	3.8	W
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	132 0.88	W W/°C
T_J,T_STG	Operating Junction and Storage Temperature Range	- 55 to +175	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300	°C

SFW9540 Features

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` 175 Operating Temperature
` Lower Leakage Current : 10 A (Max.) @ V_DS= -100V
` Low R_DS(ON) : 0.161 (Typ.)

SFW9610 Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	-200	V
I_D	Continuous Drain Current (T_C=25)	-1.75	A
I_D	Continuous Drain Current (T_C=100)	-1.0	A
I_DM	Drain Current-Pulsed	-7.0	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy	143	mJ
I_AR	Avalanche Current	-1.75	A
E_AR	Repetitive Avalanche Energy	2.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
P_D	Total Power Dissipation (T_A=25)^*	3.1	W
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	20 0.16	W W/°C
T_J,T_STG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300	°C

SFW9610 Features

· Avalanche Rugged Technology
· Rugged Gate Oxide Technology
· Lower Input Capacitance
· Improved Gate Charge
· Extended Safe Operating Area
· Lower Leakage Current : 10 mA (Max.) @ V_DS= -200V
· Low R_DS(ON) : 2.084 W (Typ.)

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