SGW30N60, SGW30N60HS, SGW50N60HS Selling Leads, Datasheet
MFG:INFINEON Package Cooled:P-TO247-3-1 D/C:TO247
SGW30N60, SGW30N60HS, SGW50N60HS Datasheet download
Part Number: SGW30N60
MFG: INFINEON
Package Cooled: P-TO247-3-1
D/C: TO247
SGW30N60, SGW30N60HS, SGW50N60HS
- Table of contents:
Info of SGW30N60
Info of SGW30N60HS
Info of SGW50N60HS
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About SGW30N60
PDF/DataSheet Download
Datasheet: SGW30N60
File Size: 433035 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SGW02N120
PDF/DataSheet Download
Datasheet: SGW02N120
File Size: 318230 KB
Manufacturer: Infineon Technologies AG
Download : Click here to Download
About SGW50N60HS
PDF/DataSheet Download
Datasheet: SGW50N60HS
File Size: 339064 KB
Manufacturer: Infineon Technologies AG
Download : Click here to Download
SGW30N60 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCE |
600 |
V |
|
DC collector current TC = 25°C TC = 100°C |
IC |
41 30 |
A
|
|
Pulsed collector current, tp limited by Tjmax |
I Cpul s |
112 | |
|
Turn off safe operating area VCE 600V, Tj 150°C |
- |
112
| |
|
Gate-emitter voltage |
VGE |
±20 |
V |
|
Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C |
EAS |
165 |
mJ |
|
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
|
Power dissipation TC = 25°C |
P t o t |
350 |
W |
|
Operating junction and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
SGW30N60 Features
• 75% lower Eoff compared to previous generationcombined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:- Motor controls- Inverter
• NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capability
• Short circuit withstand time 10 µs
• Designed for:- Motor controls- Inverter
• NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capability
SGW50N60HS Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCE |
600 |
V |
| DC collector current TC = 25°C TC = 100°C |
IC |
100 50 |
|
| Pulsed collector current, tp limited by Tjmax |
ICpu ls |
150 | |
| Turn off safe operating area VCE 1200V, Tj 150°C |
- |
150 | |
| Gate-emitter voltage static transient (tp<1µs, D<0.05) |
VGE |
±20 ±30 |
V |
| Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25, start at Tj = 25°C |
EAS |
280 |
mJ |
| Short circuit withstand time2 VGE = 15V, 100V VCC 1200V, Tj 150°C |
tSC |
10 |
s |
| Power dissipation TC = 25°C |
Pt o t |
416 |
W |
| Operating junction and storage temperature |
Tj , Ts tg |
-55...+150 |
°C |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s |
Tj ( t l ) |
260 |
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
SGW50N60HS Features
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 s
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
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