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Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
SGW5N60RUF Maximum Ratings
Symbol
Description
SGH15N60RUF
Units
VCES
Collector-Emitter Voltage
600
V
VCzES
Gate-Emitter Voltage
±20
V
IC
Collector Current................ @ TC = 25
8
A
Collector Current ............... @ TC = 100
5
A
I CM(1)
Pulsed Collector Current
15
A
TSC
Short Circuit Withstand Time ....@ TC = 100
10
us
PD
Maximum Power Dissipation .........@ TC = 25
60
W
Maximum Power Dissipation ........@ TC = 100
25
W
TJ
Operating Junction Temperature
-55 to +150
Tstg
Storage Temperature Range
-55 to +150
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
300
SGW5N60RUF Features
• Short circuit Rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : V CE(sat) = 2.2 V @ IC = 5A • High input impedance
SGW5N60RUF Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
SGW5N60RUFDTM Parameters
Technical/Catalog Information
SGW5N60RUFDTM
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Input Type
-
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
5A
Vce(on) (Max) @ Vge, Ic
-
Power - Max
-
Mounting Type
Surface Mount
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging
Tape & Reel (TR)
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
SGW5N60RUFDTM SGW5N60RUFDTM
SGW6N60UF General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
SGW6N60UF Maximum Ratings
Symbol
Description
SGH15N60RUF
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±20
V
IC
Collector Current................ @ TC = 25
6
A
Collector Current ............... @ TC = 100
3
A
I CM(1)
Pulsed Collector Current
25
A
PD
Maximum Power Dissipation .........@ TC = 25
30
W
Maximum Power Dissipation ........@ TC = 100
12
W
TJ
Operating Junction Temperature
-55 to +150
Tstg
Storage Temperature Range
-55 to +150
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
300
SGW6N60UF Features
• High speed switching • Low saturation voltage : V CE(sat) = 2.1 V @ IC = 3A • High input impedance
SGW6N60UF Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.