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Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
SGW5N60RUFD Maximum Ratings
Symbol
Description
SGH15N60RUF
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
±20
V
IC
Collector Current................ @ TC = 25
8
A
Collector Current ............... @ TC = 100
5
A
I CM(1)
Pulsed Collector Current
15
A
IF
Diode Continuous Forward Current @ TC = 100
8
A
IFM
Diode Maximum Forward Current
56
A
TSC
Short Circuit Withstand Time ....@ TC = 100
10
us
PD
Maximum Power Dissipation .........@ TC = 25
60
W
Maximum Power Dissipation ........@ TC = 100
25
W
TJ
Operating Junction Temperature
-55 to +150
Tstg
Storage Temperature Range
-55 to +150
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
300
SGW5N60RUFD Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : V CE(sat) = 2.2 V @ IC = 5A • High input impedance • CO-PAK, IGBT with FRD : trr = 37ns (typ.)
SGW5N60RUFD Typical Application
AC & DC motor controls, general purpose inverters, robotics, and servo controls.