MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-163 D/C:08+
SI3442BDV-T1, SI3442BDV-TI-E3, SI3442DV Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOT-163
D/C: 08+
Description: MOSFET N-CHAN 20V 4.1A SSOT6
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PDF/DataSheet Download
Datasheet: SI3442BDV-T1-E3
File Size: 63002 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SI3000
File Size: 1162723 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SI3442DV
File Size: 76168 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | SI3442DV |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.1A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4.1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 365pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
| Package / Case | SSOT-6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SI3442DV SI3442DV |
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 20 | V |
| VGSS | Gate-Source Voltage | 8 | V |
| ID | Drain Current Continuous (Note 1a) Pulsed |
4.1 | A |
| 15 | |||
| PD | Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
1.6 | W |
| 1 | |||
| 0.8 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
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